Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

Article

Creator

Akira Uedono ; Hideki Sakurai ; Jun Uzuhashi ; Tetsuo Narita ; Kacper Sierakowski ; Shoji Ishibashi ; Shigefusa F. Chichibu ; Michal Bockowski ; Jun Suda ; Tadakatsu Ohokubo ; Nobuyuki Ikarashi ; Kazuhiro Hono ; Tetsu Kachi

Keyword

gallium nitride, vacancy, positron

Date published

2023-03-15

Updated at

2024-01-05 22:12:35 +0900