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HZO_Operando_SPring-8.pdf
Electron trapping/detrapping at oxygen vacancies and imprint evolution in La-doped Hf0.5Zr0.5O2 ferroelectric capacitors probed by hard x-ray photoelectron spectroscopy
Article
Creator
W. Hamouda ORCID ; Y. Yamashita SAMURAI ORCID ; S. Ueda SAMURAI ORCID ; S. Matzen ORCID ; O. Renault ORCID ; F. Mehmood ORCID ; T. Mikolajick ORCID ; U. Schroeder ORCID ; N. Barrett ORCID
Keyword
Hf0.5Zr0.5O2, HAXPES, operando
Date published
2025-11-03
Updated at
2025-11-13 12:30:12 +0900