Electric-field tunable Type-I to Type-II band alignment transition in MoSe2/WS2 heterobilayers

Journal article

Creator

Jed Kistner-Morris (author) (Search by this author)

Jed Kistner-Morris ;

Ao Shi (author) (Search by this author)

Ao Shi ;

Erfu Liu (author) (Search by this author)

Erfu Liu ;

Trevor Arp (author) (Search by this author)

Trevor Arp ;

Farima Farahmand (author) (Search by this author)

Farima Farahmand ;

Takashi Taniguchi (author) (Search by this author)

https://orcid.org/0000-0002-1467-3105

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Takashi Taniguchi ;

Kenji Watanabe (author) (Search by this author)

https://orcid.org/0000-0003-3701-8119

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Kenji Watanabe ;

Vivek Aji (author) (Search by this author)

Vivek Aji ;

Chun Hung Lui (author) (Search by this author)

Chun Hung Lui ;

Nathaniel Gabor (author) (Search by this author)

Nathaniel Gabor

Keyword

Semiconductor heterojunctions, band alignment, MoSe2/WS2

Date published

2024-05-14

Updated at

2025-02-23 22:48:36 +0900