Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review
- Journal article
- Creator
-
;Tianzhuo Zhan (author) (Search by this author);Mao Xu (author) (Search by this author);Zhi Cao (author) (Search by this author);Chong Zheng (author) (Search by this author);Hiroki Kurita (author) (Search by this author);Fumio Narita (author) (Search by this author)Yen-Ju Wu (author) (Search by this author)National Institute for Materials Science
;
Yibin Xu (author) (Search by this author)National Institute for Materials Science
;
;Haidong Wang (author) (Search by this author);Mengjie Song (author) (Search by this author);Wei Wang (author) (Search by this author);Yanguang Zhou (author) (Search by this author);Xuqing Liu (author) (Search by this author);Yu Shi (author) (Search by this author);Yu Jia (author) (Search by this author);Sujun Guan (author) (Search by this author);Tatsuro Hanajiri (author) (Search by this author);Toru Maekawa (author) (Search by this author);Akitoshi Okino (author) (Search by this author)Takanobu Watanabe (author) (Search by this author) - Keyword
- thermal boundary resistance, Gallium Nitride, semiconductor, high-electron-mobility transistors
- Date published
- 2023-11-08
- Updated at
- 2024-01-05 22:11:33 +0900