8 records found. Displaying records 1 to 8.
Lattice-matched (Al x Sc y Ga1− x − y )2O3/ β -Ga2O3 heterostructures with widely tunable bandgap
- Journal article
- Creator
-
Kazuki Koreishi (author) (Search by this author)
https://orcid.org/0009-0000-1580-8262
(unauthenticated)
;
Kodai Niitsu (author) (Search by this author)
;
Takuto Soma (author) (Search by this author)
https://orcid.org/0000-0001-8685-9606
(unauthenticated)
;
Kohei Yoshimatsu (author) (Search by this author)
https://orcid.org/0000-0001-9288-068X
(unauthenticated)
;
Akira Ohtomo (author) (Search by this author)
https://orcid.org/0000-0003-0300-4712
(unauthenticated)
- Keyword
- Ga2O3, Wide bandgap, Bandgap engineering
- Date published
- 2026-07-06
- Updated at
- 2026-08-06 09:39:59 +0900
High Schottky barrier formation in tilted-dipole PdCoO2/ β -Ga2O3 (001) interfaces
- Journal article
- Creator
-
Takayuki Harada (author) (Search by this author)
;
Takuro Nagai (author) (Search by this author)
;
Kohei Sasaki (author) (Search by this author)
https://orcid.org/0000-0002-8923-7703
(unauthenticated)
- Keyword
- Thin film, Ga2O3, Delafossite, Power devices, Schottky
- Date published
- 2026-06-01
- Updated at
- 2026-06-10 14:51:59 +0900
Epitaxial Lateral Overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows
- Journal article
- Creator
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Yuichi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
;
Takashi Shinohe (author) (Search by this author)FLOSFIA INC.
- Keyword
- Ga2O3, dislocation, HVPE, ELO
- Date published
- 2025-05-19
- Updated at
- 2025-05-21 16:30:09 +0900
Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001)
- Journal article
- Creator
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Yuhua Tsai (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group, National Institute for Materials Science
;
;Yusuke Hashimoto (author) (Search by this author)NAIST;ZeXu Sun (author) (Search by this author)NAIST;Takuya Moriki (author) (Search by this author)NAIST;Takashi Tadamura (author) (Search by this author)NAISTTakahiro Nagata (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group, National Institute for Materials Science
;
;Piero Mazzolini (author) (Search by this author)University of Parma;Antonella Parisini (author) (Search by this author)University of Parma;Matteo Bosi (author) (Search by this author)IMEM-CNR;Luca Seravalli (author) (Search by this author)IMEM-CNR;Tomohiro Matsushita (author) (Search by this author)NAISTYoshiyuki Yamashita (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group, National Institute for Materials Science
- Keyword
- Ga2O3, κ-Ga2O3
- Date published
- 2024-04-03
- Updated at
- 2025-03-07 12:30:11 +0900
Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)
- Journal article
- Creator
-
Yuhua Tsai (author) (Search by this author)National Institute for Materials Science
;
Masaaki Kobata (author) (Search by this author)
https://orcid.org/0000-0002-9710-6308
(unauthenticated)
;
Tatsuo Fukuda (author) (Search by this author)
https://orcid.org/0000-0002-4832-5862
(unauthenticated)
;
Hajime Tanida (author) (Search by this author)
https://orcid.org/0009-0002-8468-7315
(unauthenticated)
;
;Toru Kobayashi (author) (Search by this author)Yoshiyuki Yamashita (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, dopant, b-Ga2O3
- Date published
- 2024-03-11
- Updated at
- 2024-03-19 12:30:20 +0900
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science
- Keyword
- Ga2O3, (-102), selective area growth, selective area etching
- Date published
- 2024-01-22
- Updated at
- 2025-01-25 12:30:12 +0900
Materials issues and devices of α- and β-Ga2O3
- Journal article
- Creator
-
;Elaheh Ahmadi (author) (Search by this author)Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, power device, epitaxy
- Date published
- 2019-10-28
- Updated at
- 2024-01-29 15:08:11 +0900
Halide Vapor Phase Epitaxy 2—Heteroepitaxial Growth of α- and ɛ-Ga2O3
- Book
- Creator
-
大島祐一 (author) (Search by this author)Research Center for Functional Materials/Optical Materials Field/Optical Single Crystals Group, National Institute for Materials Science
- Keyword
- Ga2O3, HVPE
- Date published
- 2020-04-24
- Updated at
- 2024-01-30 10:29:29 +0900