Keyword: vacancy

3 records found.

2501.16715v1.pdf
Systematic investigation of dynamic nuclear polarization with boron vacancy in hexagonal boron nitride
Journal article
Creator
Yuki Nakamura (author) (Search by this author)
;
Shunsuke Nishimura (author) (Search by this author)
;
Takuya Iwasaki (author) (Search by this author)
ORCID SAMURAI ;
Shu Nakaharai (author) (Search by this author)
National Institute for Materials Science
ORCID ;
Shinichi Ogawa (author) (Search by this author)
;
Yukinori Morita (author) (Search by this author)
;
Kenji Watanabe (author) (Search by this author)
ORCID SAMURAI ;
Takashi Taniguchi (author) (Search by this author)
ORCID SAMURAI ;
Kento Sasaki (author) (Search by this author)
;
Kensuke Kobayashi (author) (Search by this author)
Keyword
vacancy, optically detected magnetic resonance, dynamic nuclear polarization, hexagonal boron nitride
Date published
2025-05-02
Updated at
2025-05-22 12:30:18 +0900

Abstracts.pdf
Atomic cation vacancy engineering of NiFe-LDH nanosheets towards oxygen evolution reaction
Conference poster
Creator
Huanran Li (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Nanomaterials Field/Functional Nanomaterials Group, National Institute for Materials Science
ORCID SAMURAI ;
Yoshiyuki Sugahara (author) (Search by this author)
Waseda Univeristy
;
Takayoshi Sasaki (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Nanomaterials Field/Soft Chemistry Group, National Institute for Materials Science
ORCID SAMURAI ;
Renzhi Ma (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Nanomaterials Field/Functional Nanomaterials Group, National Institute for Materials Science
ORCID SAMURAI
Keyword
vacancy
Date published
Updated at
2024-10-23 12:30:19 +0900

Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam.pdf
Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam
Journal article
Creator
Akira Uedono (author) (Search by this author)
;
Hideki Sakurai (author) (Search by this author)
;
Jun Uzuhashi (author) (Search by this author)
ORCID SAMURAI ;
Tetsuo Narita (author) (Search by this author)
;
Kacper Sierakowski (author) (Search by this author)
;
Shoji Ishibashi (author) (Search by this author)
;
Shigefusa F. Chichibu (author) (Search by this author)
;
Michal Bockowski (author) (Search by this author)
;
Jun Suda (author) (Search by this author)
;
Tadakatsu Ohokubo (author) (Search by this author)
;
Nobuyuki Ikarashi (author) (Search by this author)
;
Kazuhiro Hono (author) (Search by this author)
ORCID SAMURAI ;
Tetsu Kachi (author) (Search by this author)
Keyword
gallium nitride, vacancy, positron
Date published
2023-03-15
Updated at
2024-01-05 22:12:35 +0900