2 records found.
Nanoscale Origin of Strong Charge Carrier Scattering at Grain Boundaries in Orthorhombic SnSe Semiconductor Thin Films
- Journal article
- Creator
-
;Xinyi He (author) (Search by this author);Kenji Matsuo (author) (Search by this author)Takayoshi Katase (author) (Search by this author)
https://orcid.org/0000-0002-2593-7487
(unauthenticated)
;
Kota Hanzawa (author) (Search by this author)
https://orcid.org/0000-0002-0995-9360
(unauthenticated)
;
;Hideto Yoshida (author) (Search by this author)Shigenori Ueda (author) (Search by this author)
;
Hidenori Hiramatsu (author) (Search by this author)
https://orcid.org/0000-0002-5664-5831
(unauthenticated)
;
Hideo Hosono (author) (Search by this author)
;
Toshio Kamiya (author) (Search by this author) - Keyword
- tin selenide, thermoelectric material, epitaxial film, carrier transport, defect, density functional theory
- Date published
- 2025-04-25
- Updated at
- 2025-05-15 08:38:54 +0900
Investigation of group 13 elements as potential candidates for p-type dopants in the narrow-gap thermoelectric semiconductor α-SrSi2
- Journal article
- Creator
-
;Haruno Kunioka (author) (Search by this author);Daishi Shiojiri (author) (Search by this author);Shinta Takahashi (author) (Search by this author);Kota Hiratsuka (author) (Search by this author);Masato Yamaguchi (author) (Search by this author);Naomi Hirayama (author) (Search by this author);Yoji Imai (author) (Search by this author)Motoharu Imai (author) (Search by this author)National Institute for Materials Science
;
Tsutomu Iida (author) (Search by this author)
- Keyword
- silicide, thermoelectric material, doping, first-principles calculation, melt growth, sintering, SrSi2
- Date published
- 2024-04-25
- Updated at
- 2024-07-17 09:05:42 +0900