Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

Journal article

Creator

Akira Uedono (author) (Search by this author)

Akira Uedono ;

Hideki Sakurai (author) (Search by this author)

Hideki Sakurai ;

Jun Uzuhashi (author) (Search by this author)

https://orcid.org/0000-0003-2023-8158

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Jun Uzuhashi ;

Tetsuo Narita (author) (Search by this author)

Tetsuo Narita ;

Kacper Sierakowski (author) (Search by this author)

Kacper Sierakowski ;

Shoji Ishibashi (author) (Search by this author)

Shoji Ishibashi ;

Shigefusa F. Chichibu (author) (Search by this author)

Shigefusa F. Chichibu ;

Michal Bockowski (author) (Search by this author)

Michal Bockowski ;

Jun Suda (author) (Search by this author)

Jun Suda ;

Tadakatsu Ohokubo (author) (Search by this author)

Tadakatsu Ohokubo ;

Nobuyuki Ikarashi (author) (Search by this author)

Nobuyuki Ikarashi ;

Kazuhiro Hono (author) (Search by this author)

https://orcid.org/0000-0001-7367-0193

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Kazuhiro Hono ;

Tetsu Kachi (author) (Search by this author)

Tetsu Kachi

Keyword

gallium nitride, vacancy, positron

Date published

2023-03-15

Updated at

2024-01-05 22:12:35 +0900