Degradation of vertical GaN diodes during proton and xenon-ion irradiation

Journal article

Creator

Hironori Okumura (author) (Search by this author)

Hironori Okumura ;

Yohei Ogawara (author) (Search by this author)

Yohei Ogawara ;

Manabu Togawa (author) (Search by this author)

Manabu Togawa ;

Masaya Miyahara (author) (Search by this author)

Masaya Miyahara ;

Tadaaki Isobe (author) (Search by this author)

Tadaaki Isobe ;

Kosuke Itabashi (author) (Search by this author)

Kosuke Itabashi ;

Jiro Nishinaga (author) (Search by this author)

Jiro Nishinaga ;

Masataka Imura (author) (Search by this author)

https://orcid.org/0000-0002-4236-9549

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Masataka Imura

Keyword

Schottky barrier diode, MOCVD, Vertical-type PN junction diode, Proton, Xe, Radiation irradiations, GaN

Date published

2023-06-01

Updated at

2024-08-24 08:30:18 +0900