Effects of arsenic oxides on GaAs surfaces on photoluminescence properties of buried InGaAs quantum wells: Dependence on initial surfaces before oxidation

Journal article

Creator

Zhao Ma (author) (Search by this author)

https://orcid.org/0000-0003-0151-8592

NIMS Researchers Directory SAMURAI

Zhao Ma ;

Takaaki Mano (author) (Search by this author)

https://orcid.org/0000-0002-6955-260X

NIMS Researchers Directory SAMURAI

Takaaki Mano ;

Akihiro Ohtake (author) (Search by this author)

https://orcid.org/0000-0002-3519-4613

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Akihiro Ohtake ;

Takashi Kuroda (author) (Search by this author)

https://orcid.org/0000-0001-6445-7673

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Takashi Kuroda

Keyword

GaAs, Surface, Termination, Oxide, Arsenic

Date published

2025-06-28

Updated at

2025-06-27 16:30:25 +0900