2 records found.
Ultrafast high-endurance memory based on sliding ferroelectrics
- Journal article
- Creator
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;Kenji Yasuda (author) (Search by this author);Evan Zalys-Geller (author) (Search by this author);Xirui Wang (author) (Search by this author);Daniel Bennett (author) (Search by this author);Suraj S. Cheema (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
;Efthimios Kaxiras (author) (Search by this author);Pablo Jarillo-Herrero (author) (Search by this author)Raymond Ashoori (author) (Search by this author) - Keyword
- Sliding ferroelectricity, Ferroelectric field-effect transistor (FeFET), Nonvolatile memory technology
- Date published
- 2024-07-05
- Updated at
- 2025-07-23 16:30:28 +0900
Non-volatile electrical polarization switching via domain wall release in 3R-MoS2 bilayer
- Journal article
- Creator
-
;Dongyang Yang (author) (Search by this author);Jing Liang (author) (Search by this author);Jingda Wu (author) (Search by this author);Yunhuan Xiao (author) (Search by this author);Jerry I. Dadap (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
Ziliang Ye (author) (Search by this author)
- Keyword
- Sliding ferroelectricity, bilayer MoS2, polarization switching
- Date published
- 2024-02-15
- Updated at
- 2025-02-08 12:30:20 +0900