Reversible Polarity Control in 2D MoTe₂ Field‐Effect Transistors for Complementary Logic Gate Applications

Journal article

Creator

Byoung‐Soo Yu (author) (Search by this author)

Byoung‐Soo Yu ;

Wonsik Kim (author) (Search by this author)

Wonsik Kim ;

Jisu Jang (author) (Search by this author)

Jisu Jang ;

Je‐Jun Lee (author) (Search by this author)

Je‐Jun Lee ;

Jung Pyo Hong (author) (Search by this author)

Jung Pyo Hong ;

Namhee Kwon (author) (Search by this author)

Namhee Kwon ;

Seunghwan Kim (author) (Search by this author)

Seunghwan Kim ;

Aelim Ha (author) (Search by this author)

Aelim Ha ;

Hong‐Kyu Kim (author) (Search by this author)

Hong‐Kyu Kim ;

Jae‐Pyoung Ahn (author) (Search by this author)

Jae‐Pyoung Ahn ;

Kwangsik Jeong (author) (Search by this author)

Kwangsik Jeong ;

Takashi Taniguchi (author) (Search by this author)

https://orcid.org/0000-0002-1467-3105

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Takashi Taniguchi ;

Kenji Watanabe (author) (Search by this author)

https://orcid.org/0000-0003-3701-8119

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Kenji Watanabe ;

Gunuk Wang (author) (Search by this author)

Gunuk Wang ;

Jongtae Ahn (author) (Search by this author)

Jongtae Ahn ;

Soohyung Park (author) (Search by this author)

Soohyung Park ;

Do Kyung Hwang (author) (Search by this author)

Do Kyung Hwang

Keyword

Polarity control, field-effect transistors, MoTe2

Date published

2024-05-15

Updated at

2025-02-14 12:31:34 +0900