Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory

Journal article

Creator

Kubota, Masato (author) (Search by this author)

Kubota, Masato ;

Nigo, Seisuke (author) (Search by this author)

Nigo, Seisuke ;

Kitazawa, Hideaki (author) (Search by this author)

https://orcid.org/0000-0002-9756-2311

NIMS Researchers Directory SAMURAI

Kitazawa, Hideaki ;

Harada, Yoshitomo (author) (Search by this author)

https://orcid.org/0000-0001-9380-2106

Harada, Yoshitomo ;

Kido, Giyuu (author) (Search by this author)

Kido, Giyuu ;

Hirayama, Taisei (author) (Search by this author)

Hirayama, Taisei ;

Kato, Seiichi (author) (Search by this author)

https://orcid.org/0000-0002-6427-5463

NIMS Researchers Directory SAMURAI

Kato, Seiichi

Keyword

Crystallographic defects, Random access memory, Electrical properties and parameters, First-principle calculations, electron energy loss spectroscopy, Electronic bandstructure, semiconductor structures, Resistive switching, Thermally stimulated current spectroscopy, Transmission electron microscope

Date published

2012-08-01

Updated at

2024-01-05 22:12:58 +0900