2 records found.
Characterization of wide-gap semiconductors by photothermal deflection spectroscopy
- Journal article
- Creator
-
Masatomo Sumiya (author) (Search by this author)National Institute for Materials Science
- Keyword
- III-V nitride semiconductor, photothermal deflection spectroscopy, defect
- Date published
- 2023-11-01
- Updated at
- 2024-12-10 16:56:31 +0900
Evaluation of defect density in bulk gallium nitrides by photothermal deflection spectroscopy and steady-state photocapacitance methods
- Journal article
- Creator
-
Masatomo Sumiya (author) (Search by this author)National Institute for Materials Science
;
;Hajime Fujikura (author) (Search by this author);Yoshitaka Nakano (author) (Search by this author);Shuhei Yashiro (author) (Search by this author)Yasuo Koide (author) (Search by this author)National Institute for Materials Science
;
Tohru Honda (author) (Search by this author)
- Keyword
- GaN bulk, defect level, photothermal deflection spectroscopy
- Date published
- 2024-04-06
- Updated at
- 2024-08-26 13:22:37 +0900