License: Creative Commons BY Attribution 4.0 International Keyword: Ga2O3
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23 records found. Displaying records 1 to 10.

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paper.pdf
Formation of near-vertical trenches and fins with flat {−201} sidewalls on (512) β-Ga 2 O 3 via TMAH wet etching
Journal article
Creator
ORCID SAMURAI
Keyword
Ga2O3
Date published
2026-12-31
Updated at
2026-09-24 09:54:18 +0900
Oshima - 2026 - Step-and-terrace surface formation on (−112) β-Ga 2 O 3 via thermal annealing-annotated.pdf
Step-and-terrace surface formation on (−112) β-Ga 2 O 3 via thermal annealing
Journal article
Creator
ORCID SAMURAI
Keyword
Ga2O3
Date published
2026-09-15
Updated at
2026-09-14 09:13:42 +0900
Nabatame_d-SiO2-Ga2O3 2026_ECS_J._Solid_State_Sci._Technol._15_064005.pdf
Characteristics of β-Ga2O3/Al2O3/Pt capacitors with a Ga2O3 surface modified using the dummy-SiO2 process
Journal article
Creator
Toshihide Nabatame (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science
ORCID SAMURAI ;
Yoshihiro Irokawa (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
ORCID SAMURAI ;
Tomomi Sawada (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Hiromi Miura (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Manami Miyamoto (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Takashi Onaya (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
ORCID ;
Yasuo Koide (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
ORCID SAMURAI ;
Kazuhito Tsukagoshi (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
ORCID SAMURAI
Keyword
Ga2O3, atomic layer deposition, dummy-SiO2, Al2O3, positive bias stress
Date published
2026-06-01
Updated at
2026-08-18 11:30:17 +0900
paper_-112.pdf
HCl-based halide vapor phase epitaxy and selective-area HCl gas etching of (−112) β-Ga 2 O 3
Journal article
Creator
ORCID SAMURAI ; ORCID SAMURAI
Keyword
Ga2O3, (−112), HVPE, HCl gas etching
Date published
2026-12-31
Updated at
2026-07-16 10:12:49 +0900
jjap_65_13_138001.pdf
(110)- and (−134)-faceted surface morphology of halide vapor phase epitaxy-grown β- Ga 2 O 3 homoepitaxial layers on (011) substrates
Journal article
Creator
ORCID SAMURAI ; ORCID SAMURAI
Keyword
Ga2O3, (011), AFM, TEM
Date published
2026-07-15
Updated at
2026-07-09 10:29:39 +0900
paper.pdf
Wet etching of (−102) β-Ga 2 O 3 with tetramethylammonium hydroxide (TMAH)
Journal article
Creator
ORCID SAMURAI
Keyword
Ga2O3, wet etching, TMAH
Date published
2026-12-31
Updated at
2026-06-11 15:11:01 +0900
article.pdf
Tetramethylammonium hydroxide (TMAH) treatment of dry-etched trenches on (010) β-Ga2O3 to enhance trench profiles
Journal article
Creator
ORCID SAMURAI
Keyword
Ga2O3, TMAH
Date published
2026-02-01
Updated at
2026-02-25 12:30:03 +0900
J_Appl_Phys_139_075302_(2026).pdf
Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
Journal article
Creator
ORCID SAMURAI ; ORCID SAMURAI ;
Shiyu Xiao (author) (Search by this author)
ORCID ;
Kazuto Murakami (author) (Search by this author)
;
Katsuhiro Imai (author) (Search by this author)
;
Takahiro Tomita (author) (Search by this author)
Keyword
Ga2O3, HVPE, Cr2O3
Date published
2026-02-21
Updated at
2026-02-18 16:30:15 +0900
jjap_65_3_038003-1.pdf
Mapping primary crystallographic planes in β -Ga 2 O 3 based on a pseudo-cubic oxygen sublattice
Journal article
Creator
ORCID SAMURAI
Keyword
Ga2O3, fcc
Date published
2026-02-16
Updated at
2026-02-18 16:30:08 +0900
band_pdos.png
First-principles lattice thermal conductivity calculation for Ga2O3 / C2/m (12) / materials id 886
Dataset
Collection
MDR lattice thermal conductivity calculation database
Creator
Atsushi Togo (author) (Search by this author)
Center for Basic Research on Materials, National Institute for Materials Science
ORCID SAMURAI
Keyword
Lattice thermal conductivity, Ga2O3
Date published
Updated at
2026-01-24 14:36:41 +0900
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