Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

ジャーナル論文

著者

Akira Uedono (author) (この著者で検索)

Akira Uedono ;

Hideki Sakurai (author) (この著者で検索)

Hideki Sakurai ;

Jun Uzuhashi (author) (この著者で検索)

https://orcid.org/0000-0003-2023-8158

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Jun Uzuhashi ;

Tetsuo Narita (author) (この著者で検索)

Tetsuo Narita ;

Kacper Sierakowski (author) (この著者で検索)

Kacper Sierakowski ;

Shoji Ishibashi (author) (この著者で検索)

Shoji Ishibashi ;

Shigefusa F. Chichibu (author) (この著者で検索)

Shigefusa F. Chichibu ;

Michal Bockowski (author) (この著者で検索)

Michal Bockowski ;

Jun Suda (author) (この著者で検索)

Jun Suda ;

Tadakatsu Ohokubo (author) (この著者で検索)

Tadakatsu Ohokubo ;

Nobuyuki Ikarashi (author) (この著者で検索)

Nobuyuki Ikarashi ;

Kazuhiro Hono (author) (この著者で検索)

https://orcid.org/0000-0001-7367-0193

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Kazuhiro Hono ;

Tetsu Kachi (author) (この著者で検索)

Tetsu Kachi

キーワード

gallium nitride, vacancy, positron

刊行年月日

2023-03-15

更新時刻

2024-01-05 22:12:35 +0900