# Halide Vapor Phase Epitaxy of twin-free a-Ga2O3 on sapphire (0001) substrates

https://mdr.nims.go.jp/datasets/ff3d0997-b819-452f-974b-c0f3b4fd8aae

## File

- [alpha-Ga2O3-ver4.0.pdf](https://mdr.nims.go.jp/filesets/5f218d02-dad4-4295-9a3b-38ee95387940/download) ([Detail](https://mdr.nims.go.jp/filesets/5f218d02-dad4-4295-9a3b-38ee95387940.md))

## Id

ff3d0997-b819-452f-974b-c0f3b4fd8aae

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-01-05T14:43:31.515660Z

## Updated at

2024-01-22T00:34:09.465631Z

## Published at

2024-01-22T03:30:07.441839Z

## Doi

https://doi.org/10.48505/nims.4336

## First published url

https://doi.org/10.7567/APEX.8.055501

## Date published

2015-05-01

## Recorded date published

2015-5-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: "(0001)サファイア基板上におけるツインフリーα-Ga2O3のHVPE成長"
  title_type: alternative
  lang: ja
- title: Halide Vapor Phase Epitaxy of twin-free a-Ga2O3 on sapphire (0001) substrates
  title_type: original
  lang: en

## Description

- description: The halide vapor phase epitaxy of a-Ga2O3 is demonstrated for the first
    time. The films are twin-free, heteroepitaxially grown on sapphire (0001) substrates
    using gallium chloride and oxygen as precursors. The growth rate reaches approximately
    150 um/h, which is over two orders of magnitude larger than those of conventional
    vapor phase epitaxial growth techniques. X-ray omega-2theta and pole figure measurements
    reveal that the film is single-crystalline (0001) a-Ga2O3 with no detectable formation
    of a-Ga2O3. The optical bandgap is determined from the transmittance spectrum
    to be 5.16 eV.
  description_type: abstract
  lang: eng

## Creator

- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
  organization: National Institute for Materials Science
- name: Encarnación G. Víllora
  role: author
- name: Kiyoshi Shimamura
  role: author
  orcid: https://orcid.org/0000-0001-6502-8731
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: α-Ga2O3
  schema: not_defined
- subject: HVPE
  schema: not_defined

## Rights

- description: "This is an author-created, un-copyedited version of an article accepted
    for publication/published in Applied Physics Express. IOP Publishing Ltd is not
    responsible for any errors or omissions in this version of the manuscript or\r\nany
    version derived from it. The Version of Record is available online at https://doi.org/10.7567/APEX.8.055501."
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: APPLIED PHYSICS EXPRESS
  issn: '18820778'
  volume: '8'
  issue: '5'
  start_page: 55501
  end_page: 55501

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



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## Fileset

- id: 5f218d02-dad4-4295-9a3b-38ee95387940
  filename: alpha-Ga2O3-ver4.0.pdf
  content_type: application/pdf
  size: 2358200
  md5: 3bd27bcd4cfb8b079c353f0e5fb6b274

## Thumbnail

fileset_id: 5f218d02-dad4-4295-9a3b-38ee95387940
filename: alpha-Ga2O3-ver4.0.pdf