Haonan Wang
;
Heejun Kim
;
Duanfei Dong
;
Keisuke Shinokita
;
Kenji Watanabe
(National Institute for Materials Science)
;
Takashi Taniguchi
(National Institute for Materials Science)
;
Kazunari Matsuda
Description:
(abstract)Moiré potential formed by stacking two monolayer semiconducting transition metal dichalcogenides with slightly lattice mismatch can act as periodic quantum confinement for optically generated exciton, generating spatially ordered zero-dimensional quantum system. However, broad emission spectrum arising from inhomogeneity among moiré potential hinders the exploration of the intrinsic properties of moiré exciton and its application for quantum optics. In this study, we have demonstrated a new method to realize the optical observation of quantum coherence and interference of a single moiré exciton in twisted monolayer semiconducting heterobilayer beyond the diffraction limit of light. A significant single and sharp photoluminescence peak from a single moiré exciton has been successfully demonstrated due to the restriction of optical excitation and detection of moiré potentials by applying the nano-fabrication to the heterobilayer. We present that the decoherence of a single moiré exciton has been accelerated with elevating temperature and excitation power density, which is determined by scattering process of moiré exciton and acoustic phonons, and between moiré excitons. The longer duration of quantum coherence of a single moiré exciton, reaching more than 10 ps, has been measured by the interferogram of emission signal at low temperature of 4 K, which is much longer than that of the exciton in a monolayer semiconductor. Moreover, the significant quantum interference has revealed the coupling between moiré excitons trapped in different moiré potential minima. The longer quantum coherence and interference of moiré exciton demonstrated in this study will provide the potential application toward quantum technologies based on moiré quantum systems.
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Keyword: Moiré potential, quantum coherence, twisted semiconducting heterobilayer
Date published: 2024-06-08
Publisher: Springer Science and Business Media LLC
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Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1038/s41467-024-48623-4
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Updated at: 2025-02-27 12:30:16 +0900
Published on MDR: 2025-02-27 12:30:16 +0900
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