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説明:

In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and connected to the leads via p-n junctions. Single electron and hole occupancy is realized and charge carriers n = 1, 2, . . . 50 can be filled successively into the quantum system with charging energies exceeding 10 meV. For the lowest quantum states we can clearly observe valley and Zeeman splittings with a spin g-factor of gs ≈ 2. In the low field-limit, the valley splitting depends linearly on the perpendicular magnetic field and is in qualitative agreement with calculations.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Bilayer graphene, quantum dot, electrostatic confinement

刊行年月日: 2018-07-24

出版者: American Physical Society (APS)

掲載誌:

• Physical Review X (ISSN: 21603308) vol. 8 issue. 3 031023

研究助成金:

• Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung
• National Center of Competence in Research Quantum Science and Technology
• Eidgenössische Technische Hochschule Zürich
• Ministry of Education, Culture, Sports, Science and Technology
• Japan Society for the Promotion of Science JP15K21722
• European Graphene Flagship

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1103/physrevx.8.031023

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更新時刻: 2025-02-23 22:50:18 +0900

MDRでの公開時刻: 2025-02-23 22:50:18 +0900