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説明:

This study investigates the influence of deposition conditions on the thermoelectric properties of titanium nitride (TiN) thin films by systematically controlling the Ar/N? gas mixing ratio during combinatorial reactive sputtering. Although the chemical composition of the films remained nearly constant except under nitrogen-free conditions, significant variations were observed in crystallographic orientation, grain growth, electrical resistivity, thermal conductivity, and thermoelectric performance. X-ray diffraction analysis revealed two distinct orientation transitions with inflection points around nitrogen fractions of approximately 70% and 40%. The Seebeck coefficient increased almost linearly as the nitrogen fraction decreased and showed only a weak dependence on crystallographic orientation. In contrast, electrical resistivity strongly correlated with orientation-dependent XRD peak intensity changes, indicating that crystal orientation is a dominant factor governing carrier transport. This behavior partially decoupled the conventional trade-off between the Seebeck coefficient and electrical resistivity, allowing optimization of the power factor without significant compositional modification. Thermal conductivity also exhibited strong orientation dependence, suggesting that phonon transport is affected by grain structure and interface density. As a result, a maximum thermoelectric figure of merit (zT) of 0.025 was achieved. Although this value is still insufficient for practical thermoelectric applications, the study demonstrates that crystallographic orientation and microstructural engineering provide an effective strategy for independently tuning thermoelectric parameters in TiN thin films. The proposed deposition-process optimization is expected to serve as a useful design guideline for improving the performance of nitride-based thermoelectric materials, including more promising systems such as ScN and CrN.

権利情報:

• In Copyright
  

  This is the version of the article before peer review or editing, as submitted by an author to Japanese Journal of Applied Physics.  IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it.  The Version of Record is available online at https://doi.org/10.35848/1347-4065/ae5197

キーワード: Thermoelectric, titanium nitride, thin film, crystal orientation, combinatorial sputter, sputter, TiN

刊行年月日: 2026-04-17

出版者: IOP Publishing

掲載誌:

• Japanese Journal of Applied Physics (ISSN: 13474065) vol. 65 issue. 7 07SP32

研究助成金:

原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.6501

公開URL: https://doi.org/10.35848/1347-4065/ae5197

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更新時刻: 2026-09-03 14:04:22 +0900

MDRでの公開時刻: 2026-09-03 16:28:52 +0900