# Transfer of Freestanding Fluoropolymer Films for Advanced Semiconductor Devices

https://mdr.nims.go.jp/datasets/fd118a2c-fd98-4c6d-a1d0-5403b4687865

## File

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## Id

fd118a2c-fd98-4c6d-a1d0-5403b4687865

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-09-14T05:36:56.533682Z

## Updated at

2026-09-25T08:03:02.441918Z

## Published at

2026-09-28T01:35:05.238782Z

## Doi



## First published url

https://doi.org/10.1021/acsami.6c05045

## Date published

2026-09-09

## Recorded date published

2026-9-9

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Transfer of Freestanding Fluoropolymer Films for Advanced Semiconductor Devices
  title_type: original
  lang: en

## Description

- description: High-quality dielectric films are essential for fabricating advanced
    electronic devices, but their direct deposition often degrades the films and their
    underlying interfaces, which compromises device performance, especially on sensitive
    or low-adhesion surfaces. To overcome these limitations, film transfer methods
    enable the integration of high-quality dielectric films onto such surfaces without
    damaging the underlying interfaces. However, existing transfer methods have predominantly
    focused on high-dielectric-constant (high-κ) materials, leaving a critical gap
    for transferable, high-quality low-κ alternatives, which are required for enabling
    low-power and high-speed electronics. Herein, we address this need by demonstrating
    a method to integrate freestanding low-κ fluoropolymer dielectric films with smooth
    surface morphology onto diverse substrates, including low-adhesion surfaces like
    hydrogen-terminated diamond. The transferred films revealed high breakdown fields
    of 8.0 ± 1.2 MV cm-1, with leakage current density remaining typically below 10-7 A cm-2
    before the breakdown. The incorporation of these fluoropolymer films as gate dielectrics
    in p-channel hydrogen-terminated diamond field-effect transistors resulted in
    transfer and output characteristics with negligible hysteresis, high channel mobility
    (≈400 cm2 V-1 s-1) and a low interface trap density (≤3 × 1011 cm-2 eV-1). These
    findings highlight the versatility of the transfer method and position freestanding
    fluoropolymers as a promising platform for forming high-quality dielectric/semiconductor
    interfaces for advanced electronics.
  description_type: abstract
  lang: und

## Creator

- name: Mohammad Monish
  role: author
  orcid: https://orcid.org/0000-0002-2352-2640
- name: Koki Hino
  role: author
  orcid: https://orcid.org/0009-0000-9131-8097
- name: Yosuke Sasama
  role: author
  orcid: https://orcid.org/0000-0002-8358-6101
- name: Masato Urakami
  role: author
- name: Takehiro Ota
  role: author
  orcid: https://orcid.org/0009-0006-1550-1395
- name: Kenji Sakamoto
  role: author
  orcid: https://orcid.org/0000-0002-1379-874X
- name: Kenichiro Takakura
  role: author
- name: Yamaguchi Takahide
  role: author
  orcid: https://orcid.org/0000-0003-0208-7317

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: freestanding fluoropolymer film
  schema: not_defined
- subject: dielectric film transfer
  schema: not_defined
- subject: low-κ dielectric
  schema: not_defined
- subject: low interface trap density
  schema: not_defined
- subject: diamond FET
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: ACS Applied Materials & Interfaces
  issn: '19448244'
  volume: '18'
  issue: '35'
  start_page: 47786
  end_page: 47796

## Conference



## Related item



## Funding

- identifier: JP22H01962
  funder_name: Japan Society for the Promotion of Science
- identifier: JP23K23230
  funder_name: Japan Society for the Promotion of Science
- identifier: JPMXP1224NM5227
  funder_name: Advanced Research Infrastructure for Materials and Nanotechnology in
    Japan
- identifier: JPMXP1225NM5207
  funder_name: Advanced Research Infrastructure for Materials and Nanotechnology in
    Japan
- identifier: JPNP14004
  funder_name: NEDO Uncharted Territory Challenge 2050

## Instrument



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## Specimen



## Chemical composition



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filename: Monish_ACSAMI2026_SI.pdf