Photoluminescence efficiency of MBE-grown MoSe2 monolayers featuring narrow excitonic lines and diverse grain structures

Mateusz Raczyński; Julia Kucharek; Kacper Oreszczuk; Aleksander Rodek; Tomasz Kazimierczuk; Rafał Bożek; Takashi Taniguchi; Kenji Watanabe; Wojciech Pacuski; Piotr Kossacki

doi:10.1016/j.jlumin.2025.121576

ジャーナル論文 Photoluminescence efficiency of MBE-grown MoSe2 monolayers featuring narrow excitonic lines and diverse grain structures

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Mateusz Raczyński, Julia Kucharek, Kacper Oreszczuk, Aleksander Rodek, Tomasz Kazimierczuk, Rafał Bożek, Takashi Taniguchi, Kenji Watanabe, Wojciech Pacuski, Piotr Kossacki. Photoluminescence efficiency of MBE-grown MoSe2 monolayers featuring narrow excitonic lines and diverse grain structures. Journal of Luminescence. 2025, 288 (), 121576. https://doi.org/10.1016/j.jlumin.2025.121576

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Recent studies have demonstrated that using h-BN as a substrate for the growth of transition metal dichalcogenides can significantly reduce excitonic linewidths. However, many other optical parameters still require optimization. In this work, we present a detailed study of the low-temperature photoluminescence efficiency of MBE-grown MoSe2 monolayers on h-BN substrates, comparing them to state-of-the-art exfoliated monolayers encapsulated in h-BN. We demonstrate that a quantitative comparison between samples requires accounting for interference effects and Purcell enhancement or suppression of the emission. By accounting for these effects in both photoluminescence and Raman signals, we show that the overall intrinsic luminescence efficiency is proportional to the sample coverage. Consequently, we find that exciton diffusion and edge effects are negligible in spectroscopy of MBE-grown samples, even for nanometer-sized crystals.

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