# Influence of local structures on amorphous alumina exhibiting resistance random-access memory function

https://mdr.nims.go.jp/datasets/fc9ca41d-68d8-427a-8d93-520a348e65c6

## File

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## Id

fc9ca41d-68d8-427a-8d93-520a348e65c6

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-08-09T07:12:05.691706Z

## Updated at

2024-08-20T03:30:28.554180Z

## Published at

2024-08-20T03:30:28.657251Z

## Doi



## First published url

https://doi.org/10.1063/5.0208486

## Date published

2024-07-14

## Recorded date published

2024-7-14

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Influence of local structures on amorphous alumina exhibiting resistance
    random-access memory function
  title_type: original
  lang: en

## Description

- description: Amorphous alumina resistance random-access memory is a promising candidate
    as a next　generation nonvolatile memory. It is intriguing that the nonvolatile
    memory function emerges in only amorphous samples, unlike crystalline samples.
    We studied local structures of amorphous alumina samples and Al2O3 polycrystalline
    using atomic pair distribution function measurements. Two amorphous alumina samples
    were prepared using anodic oxidation. Alumina material was oxidized in 0.3 M oxalic
    acid at 40 V, and 0.3 M phosphoric acid at 130 V. The high energy X-ray PDF measurements
    were performed on the amorphous samples and the polycrystalline at the BL04B2
    beamline at the SPring-8 synchrotron radiation facility. We derived the Al–Al,
    O–O, and Al–O atomic distances for each sample. By comparing them, we revealed
    that the subtle difference in the local structure significantly influences the
    performance of a nonvolatile memory function.
  description_type: abstract
  lang: und

## Creator

- name: Masato Kubota
  role: author
- name: Seiichi Kato
  role: author
  orcid: https://orcid.org/0000-0002-6427-5463
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: AIP Publishing

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## Keyword

- subject: ReRAM
  schema: not_defined
- subject: aluminum oxide
  schema: not_defined
- subject: oxygen vacancy
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

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## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Journal of Applied Physics
  issn: '00218979'
  start_page: 25102
  end_page: 25102
  article_number: '025102'

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## Fileset

- id: f8feb4ed-f965-48e9-9e91-616e350724a6
  filename: 025102_1_5.0208486.pdf
  content_type: application/pdf
  size: 1409023
  md5: 7b18641ca13a496950597b213ebaf86f

## Thumbnail

fileset_id: f8feb4ed-f965-48e9-9e91-616e350724a6
filename: 025102_1_5.0208486.pdf