# Solvation Effects on the Electrical Properties of a Microfluid-Assisted Solution Field-Effect Transistor with Atomically Thin MoS<sub>2</sub> Layers

https://mdr.nims.go.jp/datasets/fc8e44cc-1925-42a4-9032-34acaa203549

## File

- [solution_tcnq_v5_RA.pdf](https://mdr.nims.go.jp/filesets/4c7da1fe-70b1-47fe-ab65-a07429a68773/download) ([Detail](https://mdr.nims.go.jp/filesets/4c7da1fe-70b1-47fe-ab65-a07429a68773.md))

## Id

fc8e44cc-1925-42a4-9032-34acaa203549

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-10-27T07:19:59.520290Z

## Updated at

2025-10-28T03:30:37.661620Z

## Published at

2025-10-28T03:16:26.835355Z

## Doi

https://doi.org/10.48505/nims.5829

## First published url

https://doi.org/10.1021/acsanm.3c02828

## Date published

2023-08-25

## Recorded date published

2023-8-25

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Solvation Effects on the Electrical Properties of a Microfluid-Assisted Solution
    Field-Effect Transistor with Atomically Thin MoS<sub>2</sub> Layers
  title_type: original
  lang: en

## Description

- description: "A microfluid-assisted solution field-effect transistor (FET) with
    nano-\r\nscale channels of atomically thin MoS2 layers was constructed. The source−drain\r\ncurrent
    (Id) vs gate voltage (Vg) characteristics (Id−Vg) were examined with a focus on\r\nthe
    threshold voltage (Vth) at the onset of the Id−Vg curve. Id−Vg changed when the\r\nchannel
    contacted the tetracyanoquinodimethane (TCNQ) and 2,3,5,6-tetrafluoro-\r\n7,7,8,8-tetracyanoquinodimethane
    (F4-TCNQ) solutions in isopropyl alcohol (IPA),\r\nacetonitrile (ACN), and dimethyl
    sulfoxide (DMSO). The shift in Vth from the pure\r\nsolvent condition (ΔVth) increased
    monotonically with the concentration, which was\r\nsuccessfully simulated using
    Langmuir-type adsorption kinetics. We conclude that the\r\nTCNQ and F4-TCNQ solutes
    were partially solvated by the solvent and adsorbed on the MoS2 channel. Simultaneously,
    the saturated ΔVth value revealed a significant difference between the TCNQ and
    F4-TCNQ solutes. The ratio of saturated ΔVth of F4-TCNQ compared to that of TCNQ
    showed a decrease of 4.2, 1.7, and 1.3 for IPA, ACN, and DMSO, respectively. These
    results coincided with the order of the dielectric constants of these solvents
    (18.0, 36.0, and 46.6, respectively). The solutes produced the Id−Vg curve by
    both charge transfer and the gating effect, the latter of which was screened by
    the presence of a solvent. This study demonstrates that a solution FET can be
    employed in solid–solution interface chemistry."
  description_type: abstract
  lang: und

## Creator

- name: Md Nasiruddin
  role: author
- name: Zhipeng Wang
  role: author
- name: Hiroki Waizumi
  role: author
- name: Tsuyoshi Takaoka
  role: author
- name: Yasuyuki Sainoo
  role: author
- name: Atsushi Ando
  role: author
- name: Ryuichi Arafune
  role: author
  orcid: https://orcid.org/0000-0003-4371-6116
  organization: National Institute for Materials Science
- name: Mao Fukuyama
  role: author
- name: Akihide Hibara
  role: author
- name: Tadahiro Komeda
  role: author

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: transition-metaldichalcogenidesfield-effecttransistor
  schema: not_defined
- subject: TCNQ
  schema: not_defined
- subject: solvation effect
  schema: not_defined
- subject: dielectric constant
  schema: not_defined

## Rights

- identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: ACS Applied Nano Materials
  issn: '25740970'
  volume: '6'
  issue: '16'
  start_page: 15175
  end_page: 15182

## Conference



## Related item



## Funding

- identifier: 19H05621
  funder_name: Japan Society for the Promotion of Science
- identifier: 22H01886
  funder_name: Japan Society for the Promotion of Science
- identifier: JPMXP1222NM0034
  funder_name: National Institute for Materials Science

## Instrument



## Instrument operator



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## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



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## Computational method



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## Fileset

- id: 4c7da1fe-70b1-47fe-ab65-a07429a68773
  filename: solution_tcnq_v5_RA.pdf
  content_type: application/pdf
  size: 858726
  md5: ce15871e804fc0cd863ecbab028b4521

## Thumbnail

fileset_id: 4c7da1fe-70b1-47fe-ab65-a07429a68773
filename: solution_tcnq_v5_RA.pdf