# [Research Highlights Vol.78] New Diamond Transistor Exhibits High Hole Mobility

https://mdr.nims.go.jp/datasets/fc8e0e16-6f17-4eb4-aea2-dcd67be0d23a

## File

- [[Vol. 78]New Diamond Transistor Exhibits High Hole Mobility_WPI-MANA.pdf](https://mdr.nims.go.jp/filesets/93e3bc39-b322-476c-a812-7d6313231cdb/download) ([Detail](https://mdr.nims.go.jp/filesets/93e3bc39-b322-476c-a812-7d6313231cdb.md))

## Id

fc8e0e16-6f17-4eb4-aea2-dcd67be0d23a

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2022-11-22T16:33:32.362875Z

## Updated at

2023-12-26T12:47:16.408358Z

## Published at

2022-12-16T04:23:50.483764Z

## Doi

https://doi.org/10.48505/nims.3818

## First published url

https://www.nims.go.jp/mana/research/highlights/vol78.html

## Date published

2022-07-29

## Recorded date published



## Resource type

magazine

## Manuscript type

na

## Collection

- id: e1c8d7be-5bbc-4156-96cf-4c0efce6b473
  identifier: https://mdr.nims.go.jp/pid/e1c8d7be-5bbc-4156-96cf-4c0efce6b473
  title: Research Highlights

## Title

- title: "[Research Highlights Vol.78] New Diamond Transistor Exhibits High Hole Mobility"
  title_type: original
  lang: en

## Description

- description: A research team at WPI-MANA, using a new fabrication technique, has
    developed a diamond field-effect transistor with high hole mobility, which can
    lead to reduced conduction loss and higher operational speeds.
  description_type: abstract
  lang: en

## Creator

- name: International Center for Materials Nanoarchitectonics (WPI-MANA)
  role: author
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: National Institute for Materials Science
ror: https://ror.org/026v1ze26

## Managing organization



## Keyword

- subject: diamond
  schema: not_defined
- subject: field-effect transistor
  schema: not_defined
- subject: hexagonal boron nitride
  schema: not_defined
- subject: mobility
  schema: not_defined
- subject: hydrogen-terminated
  schema: not_defined
- subject: wide bandgap
  schema: not_defined
- subject: hBN
  schema: not_defined
- subject: graphite
  schema: not_defined
- subject: hBN/h-BN
  schema: not_defined

## Rights

- description: In Copyright
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: MANA E-BULLETIN
  volume: '78'

## Conference



## Related item

- identifier: https://doi.org/10.1038/s41928-021-00689-4
  identifier_type: DOI
  relation_type: refers
  related_item_type: dataset

## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 93e3bc39-b322-476c-a812-7d6313231cdb
  filename: "[Vol. 78]New Diamond Transistor Exhibits High Hole Mobility_WPI-MANA.pdf"
  content_type: application/pdf
  size: 140655
  md5: bcc4d8a77c380395cfdbe00e8de7d578

## Thumbnail

fileset_id: 93e3bc39-b322-476c-a812-7d6313231cdb
filename: "[Vol. 78]New Diamond Transistor Exhibits High Hole Mobility_WPI-MANA.pdf"