# High-quality Janus MoSSe and WSSe monolayers enabled by hBN-supported chalcogen substitution

https://mdr.nims.go.jp/datasets/fb3f34a1-5067-4d0b-9294-6ca4505a1170

## File

- [High-quality Janus MoSSe and WSSe monolayers enabled by hBN-supported chalcogen substitution.pdf](https://mdr.nims.go.jp/filesets/027da3c9-269e-4738-b7e8-a73b9b7268c6/download) ([Detail](https://mdr.nims.go.jp/filesets/027da3c9-269e-4738-b7e8-a73b9b7268c6.md))

## Id

fb3f34a1-5067-4d0b-9294-6ca4505a1170

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-10-20T07:15:35.996071Z

## Updated at

2026-10-20T23:30:11.023437Z

## Published at

2026-10-20T09:29:42.738248Z

## Doi



## First published url

https://doi.org/10.1080/14686996.2026.2713989

## Date published

2026-12-31

## Recorded date published

2026-12-31

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: High-quality Janus MoSSe and WSSe monolayers enabled by hBN-supported chalcogen
    substitution
  title_type: original
  lang: en

## Description

- description: Janus transition metal dichalcogenide (TMD) monolayers offer distinctive
    physical properties and device applications because their broken out-of-plane
    mirror symmetry induces an intrinsic out-of-plane dipole. High crystal quality
    is essential for accessing their intrinsic excitonic physics, yet improving Janus
    TMD quality remains challenging due to structural degradation and strain introduced
    during chalcogen substitution. To address this challenge, we develop a hexagonal
    boron nitride (hBN)-supported chalcogen substitution process that yields crack-free
    Janus TMD monolayers with improved optical uniformity. MoSe2 and WSe2 monolayers
    are first grown on hBN substrates and then converted into Janus MoSSe and WSSe
    monolayers via room-temperature H2 plasma treatment, respectively. Compared with
    conventional SiO2-supported samples, the hBN-supported process yields Janus monolayers
    with reduced inhomogeneous lattice strain, owing to negligible in-plane interactions
    with the substrate. The hBN-supported samples exhibit narrow photoluminescence
    (PL) linewidths of 40-50 meV at room temperature, which further decrease to ~9
    meV at 5 K. This linewidth reduction enables quantitative analysis of the trion
    binding energy and exciton–phonon interaction and provides a practical route to
    accessing intrinsic properties of Janus TMDs.
  description_type: abstract
  lang: und

## Creator

- name: Tomoya Ogawa
  role: author
- name: Wenjin Zhang
  role: author
- name: Takahiko Endo
  role: author
- name: Yuta Sawai
  role: author
- name: Dingkun Bi
  role: author
- name: Tianyishan Sun
  role: author
- name: Hiroto Ogura
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
- name: Toshiaki Kato
  role: author
- name: Yasumitsu Miyata
  role: author
  orcid: https://orcid.org/0000-0002-9733-5119

## Contact agent



## Publisher

organization: Informa UK Limited

## Managing organization



## Keyword

- subject: Janus
  schema: not_defined
- subject: MoSSe
  schema: not_defined
- subject: WSSe
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Science and Technology of Advanced Materials
  issn: '14686996'
  volume: '27'
  issue: '1'
  article_number: '2713989'

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 027da3c9-269e-4738-b7e8-a73b9b7268c6
  filename: High-quality Janus MoSSe and WSSe monolayers enabled by hBN-supported
    chalcogen substitution.pdf
  content_type: application/pdf
  size: 5789088
  md5: e56f83fa559ab3a1bcb5adac58b998b3

## Thumbnail

fileset_id: 027da3c9-269e-4738-b7e8-a73b9b7268c6
filename: High-quality Janus MoSSe and WSSe monolayers enabled by hBN-supported chalcogen
  substitution.pdf