# Ti/Pt/Au ohmic contacts to β-Ga2O3

https://mdr.nims.go.jp/datasets/fae49042-54b9-4657-bfbc-87f19f20ab5b

## File

- [TiPtAu_NIMS_Oshima.pdf](https://mdr.nims.go.jp/filesets/cd52eaf4-217b-4521-aa8c-ae4a7f87b15d/download) ([Detail](https://mdr.nims.go.jp/filesets/cd52eaf4-217b-4521-aa8c-ae4a7f87b15d.md))

## Id

fae49042-54b9-4657-bfbc-87f19f20ab5b

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-10-23T00:14:13.522505Z

## Updated at

2026-10-23T23:30:10.253950Z

## Published at

2026-10-23T07:32:14.500158Z

## Doi



## First published url

https://doi.org/10.1116/6.0005829

## Date published

2026-12-01

## Recorded date published

2026-12-1

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Ti/Pt/Au ohmic contacts to β-Ga2O3
  title_type: original
  lang: en

## Description

- description: Low-resistance and thermally stable ohmic contacts are essential for
    realizing high-performance β-Ga2O3 power devices. Although Ti/Au electrodes are
    widely used as conventional ohmic contacts, Ti–Au interdiffusion during high-temperature
    annealing remains a critical issue. Introducing a Pt diffusion barrier between
    Ti and Au is expected to suppress this interdiffusion and improve the thermal
    stability of the contacts. However, the effectiveness of the Pt layer has not
    been systematically established through a direct comparison of Ti/Pt/Au and Ti/Au
    electrodes. In this study, we systematically compared Ti/Pt/Au (30/20/70 nm) and
    Ti/Au (30/70 nm) ohmic electrodes on (001) β-Ga2O3 epiwafers annealed at temperatures
    (T) ranging from 400 to 600 °C. Both electrode stacks formed ohmic contacts at
    T ≥ 450 °C. At T ≥ 500 °C, however, the Ti/Pt/Au and Ti/Au electrodes exhibited
    distinctly different behaviors. The Ti/Pt/Au electrodes maintained their layered
    structures up to T = 550 °C and achieved a minimum specific contact resistivity
    of (7.17 ± 1.35) × 10−6 Ω cm2 at T = 550 °C, whereas the Ti/Au electrodes exhibited
    severe Ti–Au intermixing at T ≥ 500 °C and degraded electrical properties, consistent
    with the cross-sectional scanning transmission electron microscopy observations.
    This clear contrast demonstrates that the thin Pt layer served as an effective
    diffusion barrier, thereby improving the thermal stability of the electrodes and
    enabling higher-temperature annealing to achieve better contact properties.
  description_type: abstract
  lang: und

## Creator

- name: Takayoshi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8550-9735
- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891

## Contact agent



## Publisher

organization: American Vacuum Society

## Managing organization



## Keyword

- subject: Ga2O3
  schema: not_defined
- subject: ohmic contact
  schema: not_defined
- subject: Ti/Pt/Au
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Journal of Vacuum Science & Technology A
  issn: '07342101'
  volume: '44'
  issue: '6'
  article_number: '063207'

## Conference



## Related item



## Funding

- identifier: JPNP22007
  funder_name: New Energy and Industrial Technology Development Organization
- identifier: JP24K01368
  funder_name: Japan Society for the Promotion of Science

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



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## Custom property



## Fileset

- id: cd52eaf4-217b-4521-aa8c-ae4a7f87b15d
  filename: TiPtAu_NIMS_Oshima.pdf
  content_type: application/pdf
  size: 2699455
  md5: '091beb338daf8f845529ebd8168cf361'

## Thumbnail

fileset_id: cd52eaf4-217b-4521-aa8c-ae4a7f87b15d
filename: TiPtAu_NIMS_Oshima.pdf