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説明:

Volatile resistive switching in correlated-electron systems, characterized by an abrupt resistance decrease　under applied current, is crucial for developing next-generation electronics. Despite its technological significance, the underlying physics remains elusive. Inorganic thin films on substratesthe widely studied platform for resistive switchingusually exhibit broad temperature-induced metalinsulator transitions (MITs) and substantial heat dissipation. These factors complicate the nonlinear thermal effect induced by Joule heating, a key contributor to resistive switching, rendering it excessively complex and difficult to decipher. Here we investigate a resistive-switched state in the bulk organic conductor (d7-DMe-DCNQI)2Cu, which undergoes an extremely sharp first-order MIT and exhibits weak heat dissipation, using resistance and 1H-NMR measurements. These extreme conditions make the Joule heating effect vivid, allowing us to observe peculiar phenomena, including temperature locking to the MIT and ’Inverse Ohm’s law’an inverse proportionality between voltage and current. These findings provide fundamental insights into the nonlinear thermal effect in resistive switching, offering a pathway to efficient resistive-switching technologies.

権利情報:

• http://arxiv.org/licenses/nonexclusive-distrib/1.0/
  

キーワード: Metal-insulator transition, Nonequilibrium systems, Resistive switching, Strongly correlated systems

刊行年月日: 2026-08-17

出版者: American Physical Society (APS)

掲載誌:

• Physical Review Applied (ISSN: 23317019) vol. 26 issue. 2 024041

研究助成金:

• Japan Society for the Promotion of Science 22H01184
• Japan Society for the Promotion of Science 19H01852
• Japan Society for the Promotion of Science 18H05225
• Japan Science and Technology Agency JPMJCR23A1

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI:

公開URL: https://doi.org/10.1103/3yjz-8f9d

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更新時刻: 2026-09-11 10:35:18 +0900

MDRでの公開時刻: 2026-09-11 14:26:07 +0900