# Conversion of Charge Carrier Polarity in MoTe2 Field Effect Transistor via Laser Doping

https://mdr.nims.go.jp/datasets/f98380a4-5bed-4028-a9a4-6c3a1d27e23a

## File

- [nanomaterials-13-01700.pdf](https://mdr.nims.go.jp/filesets/96ba21bc-b69c-4478-b3ca-e17409e75280/download) ([Detail](https://mdr.nims.go.jp/filesets/96ba21bc-b69c-4478-b3ca-e17409e75280.md))

## Id

f98380a4-5bed-4028-a9a4-6c3a1d27e23a

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-25T08:24:02.771199Z

## Updated at

2025-02-26T07:30:16.152965Z

## Published at

2025-02-26T07:30:16.346890Z

## Doi



## First published url

https://doi.org/10.3390/nano13101700

## Date published

2023-05-22

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Conversion of Charge Carrier Polarity in MoTe2 Field Effect Transistor via
    Laser Doping
  title_type: original
  lang: en

## Description

- description: A two-dimensional (2D) atomic crystalline transition metal dichalcogenides
    has shown immense features, aiming for future nanoelectronic devices comparable
    to conventional silicon (Si). 2D molybdenum ditelluride (MoTe2) has a small bandgap,
    appears close to that of Si and is more favorable than other typical 2D semiconductors.
    In this study, we demonstrate la-ser-induced p-type doping in a selective region
    of n-type semiconducting MoTe2 field effect tran-sistors (FET) with an advance
    in using the hexagonal boron nitride as passivation layer from protecting the
    structure phase change from laser doping. A single nanoflake MoTe2-based FET,
    exhibiting initially n-type and converted to p-type in clearly four-step doping,
    changing charge transport behavior in a selective surface region by laser doping.
    The device shows high electron mobility of about 23.4 cm2V-1s-1 in an intrinsic
    n-type channel and hole mobility of about 0.61 cm2V-1s-1 with a high on/off ratio
    which has measured the device in temperature dependence makes better understanding
    in a laser-doped channel. In addition, we measured the device as a complementary
    metal–oxide–semiconductor (CMOS) inverter by switching the charge-carrier polarity
    of the MoTe2 FET. This fabrication process of selective laser doping can potentially
    be used for larger-scale MoTe2 CMOS circuit applications.
  description_type: abstract
  lang: und

## Creator

- name: Hanul Kim
  role: author
- name: Inayat Uddin
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Dongmok Whang
  role: author
- name: Gil-Ho Kim
  role: author

## Contact agent



## Publisher

organization: MDPI AG

## Managing organization



## Keyword

- subject: Two-dimensional molybdenum ditelluride
  schema: not_defined
- subject: laser-induced doping
  schema: not_defined
- subject: field effect transistors
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Nanomaterials
  issn: '20794991'
  volume: '13'
  issue: '10'
  article_number: '1700'

## Conference



## Related item



## Funding

- identifier: No. 2019R1A2C2088719
  funder_name: National Research Foundation of Korea (NRF) grant funded by the Korean
    government (MSIT)
- identifier: NRF-2021R1A2C2013378
  funder_name: National Research Foundation of Korea Grant funded by the Korean Government
- identifier: NRF-2022M3H4A1A02085189
  funder_name: National Research Foundation of Korea Grant funded by the Korean Government

## Instrument



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## Measurement method



## Specimen



## Chemical composition



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## Fileset

- id: 96ba21bc-b69c-4478-b3ca-e17409e75280
  filename: nanomaterials-13-01700.pdf
  content_type: application/pdf
  size: 1184023
  md5: 9d865a302ad13de27c05fc5367a6b5d1

## Thumbnail

fileset_id: 96ba21bc-b69c-4478-b3ca-e17409e75280
filename: nanomaterials-13-01700.pdf