# Synthesis of submillimeter-scale laterally-grown germanium monosulfide thin films and their electro-optic applications

https://mdr.nims.go.jp/datasets/f94592b6-53a0-4a38-bc17-673cf7e90ce7

## File

- [FINAL_manuscript-f-nomarked.pdf](https://mdr.nims.go.jp/filesets/7f950a86-a9b4-44f4-bf2c-14f11f4e5a4c/download) ([Detail](https://mdr.nims.go.jp/filesets/7f950a86-a9b4-44f4-bf2c-14f11f4e5a4c.md))

## Id

f94592b6-53a0-4a38-bc17-673cf7e90ce7

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-11-22T09:32:34.769491Z

## Updated at

2025-10-21T06:51:32.495758Z

## Published at

2025-10-21T06:43:11.569223Z

## Doi

https://doi.org/10.48505/nims.5023

## First published url

https://doi.org/10.1039/d4tc03074e

## Date published

2024-10-09

## Recorded date published

2024-11-19

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Synthesis of submillimeter-scale laterally-grown germanium monosulfide thin
    films and their electro-optic applications
  title_type: original
  lang: en

## Description

- description: Layered two-dimensional Group IV monochalcogenide semiconductors, a
    novel group of functional materials, are a focus of growing research interest.
    Numerous reports on germanium monosulfide (GeS) provide evidence of its advanced
    properties that gives it potential for application in electronics and optoelectronics.
    However, currently synthesized GeS tends to be patchy and discontinuous. In this
    study, a novel method that takes Mullins–Sekerka instability into account is proposed
    to grow continuous GeS thin films. By applying a pre-deposited amorphous GeS layer,
    submillimeter-scale laterally-grown GeS thin films with single domain areas of
    800 μm in size and 100 nm in thickness are successfully achieved. Field-effect
    transistor (FET) arrays with GeS thin films directly grown on a SiO2/Si substrate
    at a growth temperature of 420 °C and isolated GeS channel patterns are fabricated
    for the first time and show clear gate voltage-dependent current–voltage (I–V)
    characteristics. We also obtained the hysteresis response of the I–V characteristics,
    which exhibit notably restrained behavior under light illumination. The successful
    synthesis of submillimeter-scale laterally-grown GeS thin films and the fabrication
    of GeS FET arrays should unlock the significant potential of GeS for use as a
    key functional material in the development of next-generation electronic and optoelectronic
    applications, such as full-light controlled computing-in-memory devices and sensors.
  description_type: abstract
  lang: und

## Creator

- name: Qinqiang Zhang
  role: author
  orcid: https://orcid.org/0000-0001-7242-1718
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Ryo Matsumura
  role: author
  orcid: https://orcid.org/0000-0003-2303-4978
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Kazuhito Tsukagoshi
  role: author
  orcid: https://orcid.org/0000-0001-9710-2692
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Naoki Fukata
  role: author
  orcid: https://orcid.org/0000-0002-0986-8485
  department: National Institute for Materials Science
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: Royal Society of Chemistry (RSC)

## Managing organization



## Keyword

- subject: Lateral growth
  schema: not_defined
- subject: Germanium monosulfide
  schema: not_defined
- subject: Two-dimensional layered semiconductors
  schema: not_defined
- subject: Field effect transistors
  schema: not_defined
- subject: Optoelectronics
  schema: not_defined
- subject: Hysteresis
  schema: not_defined

## Rights

- identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2024-10-09
end_date: 2025-10-09

## Journal

- title: Journal of Materials Chemistry C
  issn: '20507526'
  volume: '12'
  issue: '44'
  article_number: '18101'

## Conference



## Related item



## Funding

- identifier: JP20K14796
  funder_name: Japan Society for the Promotion of Science
- identifier: JP23K13370
  funder_name: Japan Society for the Promotion of Science
- identifier: 23NM5171
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: 24UT1037
  funder_name: Ministry of Education, Culture, Sports, Science and Technology

## Instrument



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## Measurement method



## Specimen



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## Fileset

- id: 7f950a86-a9b4-44f4-bf2c-14f11f4e5a4c
  filename: FINAL_manuscript-f-nomarked.pdf
  content_type: application/pdf
  size: 2115346
  md5: 927a5d1b75fbd0df44806ba5ef3f2249

## Thumbnail

fileset_id: 7f950a86-a9b4-44f4-bf2c-14f11f4e5a4c
filename: FINAL_manuscript-f-nomarked.pdf