# Hypotaxy of wafer-scale single-crystal transition metal dichalcogenides https://mdr.nims.go.jp/datasets/f827eb5f-3cf1-4497-ad69-45e166491dfe ## File - [2025A01022G_Nature_Hypotaxy of Wafer-scale Single Crystal Transition Metal Dichalcogenides.docx](https://mdr.nims.go.jp/filesets/4384d2ba-3982-4bee-9a89-21f579deaa39/download) ([Detail](https://mdr.nims.go.jp/filesets/4384d2ba-3982-4bee-9a89-21f579deaa39.md)) ## Id f827eb5f-3cf1-4497-ad69-45e166491dfe ## Local identifier ## Visibility open_to_public ## State published ## Created at 2026-07-02T02:47:45.852186Z ## Updated at 2026-07-03T07:14:43.655639Z ## Published at 2026-07-03T09:30:20.352534Z ## Doi ## First published url https://doi.org/10.1038/s41586-024-08492-9 ## Date published 2025-02-27 ## Recorded date published 2025-2-27 ## Resource type journal_article ## Manuscript type accepted_manuscript ## Collection ## Title - title: Hypotaxy of wafer-scale single-crystal transition metal dichalcogenides title_type: original lang: en ## Description - description: Two-dimensional (2D) semiconductors, particularly transition metal dichalcogenides (TMDs), are promising for advanced electronics beyond silicon1,2,3. Traditionally, TMDs are epitaxially grown on crystalline substrates by chemical vapour deposition. However, this approach requires post-growth transfer to target substrates, which makes controlling thickness and scalability difficult. Here we introduce a method called hypotaxy (‘hypo’ meaning downward and ‘taxy’ meaning arrangement), which enables wafer-scale single-crystal TMD growth directly on various substrates, including amorphous and lattice-mismatched substrates, while preserving crystalline alignment with an overlying 2D template. By sulfurizing or selenizing a pre-deposited metal film under graphene, aligned TMD nuclei form, coalescing into a single-crystal film as graphene is removed. This method achieves precise MoS2 thickness control from monolayer to hundreds of layers on diverse substrates, producing 4-inch single-crystal MoS2 with high thermal conductivity (about 120 W m−1 K−1) and mobility (around 87 cm2 V−1 s−1). Furthermore, nanopores created in graphene using oxygen plasma treatment allow MoS2 growth at a lower temperature of 400 °C, compatible with back-end-of-line processes. This hypotaxy approach extends to other TMDs, such as MoSe2, WS2 and WSe2, offering a solution to substrate limitations in conventional epitaxy and enabling wafer-scale TMDs for monolithic three-dimensional integration. description_type: abstract lang: en ## Creator - name: Donghoon Moon role: author - name: Wonsik Lee role: author - name: Chaesung Lim role: author - name: Jinwoo Kim role: author - name: Jiwoo Kim role: author - name: Yeonjoon Jung role: author - name: Hyun-Young Choi role: author - name: Won Seok Choi role: author - name: Hangyel Kim role: author - name: Ji-Hwan Baek role: author - name: Changheon Kim role: author - name: Jaewoong Joo role: author - name: Hyun-Geun Oh role: author - name: Hajung Jang role: author - name: Kenji Watanabe role: author orcid: https://orcid.org/0000-0003-3701-8119 organization: National Institute for Materials Science - name: Takashi Taniguchi role: author orcid: https://orcid.org/0000-0002-1467-3105 organization: National Institute for Materials Science - name: Sukang Bae role: author - name: Jangyup Son role: author - name: Huije Ryu role: author - name: Junyoung Kwon role: author - name: Hyeonsik Cheong role: author - name: Jeong Woo Han role: author - name: Hyejin Jang role: author - name: Gwan-Hyoung Lee role: author ## Contact agent ## Publisher organization: Springer Science and Business Media LLC ## Managing organization ## Keyword - subject: Transition metal dichalcogenides (TMDs) schema: not_defined - subject: Wafer-scale single-crystal growth schema: not_defined - subject: Two-dimensional (2D) semiconductors schema: not_defined ## Rights - description: 'This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: https://doi.org/10.1038/s41586-024-08492-9.' identifier: http://rightsstatements.org/vocab/InC/1.0/ ## Other identifier(s) ## Data origin - data_origin_type: other ## Embargo start_date: 2025-02-19 end_date: 2025-08-19 ## Journal - title: Nature issn: '00280836' volume: '638' issue: '8052' start_page: 957 end_page: 964 ## Conference ## Related item ## Funding ## Instrument ## Instrument operator ## Instrument managing organization ## Measurement method ## Specimen ## Chemical composition ## Structure for specimen ## Structural feature for specimen ## Specific property for specimen ## Process for specimen treatment ## Computational method ## Energy level/transition state ## Software ## Custom property ## Fileset - id: 4384d2ba-3982-4bee-9a89-21f579deaa39 filename: 2025A01022G_Nature_Hypotaxy of Wafer-scale Single Crystal Transition Metal Dichalcogenides.docx content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document size: 14707249 md5: 6b4ceda6403610ed44642a23b1b32d75 ## Thumbnail fileset_id: 4384d2ba-3982-4bee-9a89-21f579deaa39 filename: 2025A01022G_Nature_Hypotaxy of Wafer-scale Single Crystal Transition Metal Dichalcogenides.docx