Tomohide Morikawa
;
Masanori Kodera
;
Takao Shimizu
;
Keisuke Ishihama
;
Yoshitaka Ehara
;
Osami Sakata
;
Hiroshi Funakubo
Description:
(abstract)Thin films of Sr(Zr,Ti)O3 were investigated as buffer layers to induce tensile strain in ferroelectric thin films such as PbTiO3 and Pb(Zr,Ti)O3 to control the domain structure. By tuning the composition of Sr(Zr,Ti)O3, (100)-oriented PbTiO3 and Pb(Zr,Ti)O3 films were obtained, revealing that tensile strain was introduced into the thin films by the lattice of the buffer layer. We propose a methodology for the successive control of tensile stress, which is useful for understanding and controlling the domain structures of ferroelectric films that result in the ferroelectric and piezoelectric properties of ferroelectric thin films.
Rights:
Keyword: Epitaxy, Ferroelectric domain, PZT, Tensile strain
Date published: 2024-01-15
Publisher: AIP Publishing
Journal:
Funding:
Manuscript type: Author's version (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.5208
First published URL: https://doi.org/10.1063/5.0180449
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Other identifier(s):
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Updated at: 2024-12-24 13:58:47 +0900
Published on MDR: 2024-12-24 13:58:47 +0900
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