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Description:

Thin films of Sr(Zr,Ti)O3 were investigated as buffer layers to induce tensile strain in ferroelectric thin films such as PbTiO3 and Pb(Zr,Ti)O3 to control the domain structure. By tuning the composition of Sr(Zr,Ti)O3, (100)-oriented PbTiO3 and Pb(Zr,Ti)O3 films were obtained, revealing that tensile strain was introduced into the thin films by the lattice of the buffer layer. We propose a methodology for the successive control of tensile stress, which is useful for understanding and controlling the domain structures of ferroelectric films that result in the ferroelectric and piezoelectric properties of ferroelectric thin films.

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• In Copyright
  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Tomohide Morikawa, Masanori Kodera, Takao Shimizu, Keisuke Ishihama, Yoshitaka Ehara, Osami Sakata, Hiroshi Funakubo; Domain structures of PbTiO3 and Pb(Zr,Ti)O3 thin films controlled by tensile strain induced by a Sr(Zr,Ti)O3 buffer layer. Appl. Phys. Lett. 15 January 2024; 124 (3): 032901 and may be found at https://doi.org/10.1063/5.0180449.

Keyword: Epitaxy, Ferroelectric domain, PZT, Tensile strain

Date published: 2024-01-15

Publisher: AIP Publishing

Journal:

• Applied Physics Letters (ISSN: 00036951) vol. 124 issue. 3

Funding:

• Tokodai Institute for Element Strategy JPMXP0112101001
• JSPS KAKENHI 19K15288
• JSPS KAKENHI 23KJ0903
• Japan Society for the Promotion of Science 20H05185

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5208

First published URL: https://doi.org/10.1063/5.0180449

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Updated at: 2024-12-24 13:58:47 +0900

Published on MDR: 2024-12-24 13:58:47 +0900