# Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs

https://mdr.nims.go.jp/datasets/f604e8e8-0d5a-4047-b560-6225937f10b3

## File

- [Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs.pdf](https://mdr.nims.go.jp/filesets/3c075d71-01ef-4b6a-8474-bd517987d34f/download) ([Detail](https://mdr.nims.go.jp/filesets/3c075d71-01ef-4b6a-8474-bd517987d34f.md))

## Id

f604e8e8-0d5a-4047-b560-6225937f10b3

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2023-11-13T01:30:44.330017Z

## Updated at

2024-04-19T03:30:23.296471Z

## Published at

2024-04-19T03:30:23.385764Z

## Doi

https://doi.org/10.48505/nims.4485

## First published url

https://doi.org/10.23919/IWJT59028.2023.10175173

## Date published

2023-06-08

## Recorded date published

2023-6-8

## Resource type

conference_paper

## Manuscript type

authors_original

## Collection



## Title

- title: Development of p-type Ion Implantation Technique for Realization of GaN Vertical
    MOSFETs
  title_type: original
  lang: en

## Description

- description: GaN has attracted attention as a semiconductor material for next-generation
    power switching devices. Vertical-type GaN devices with MOS gate driving are preferable
    for high-power switching applications. Due to recent advances in bulk GaN crystal
    growth, more studies are reporting vertical-type GaN devices with a breakdown
    voltage exceeding 1 kV on GaN substrates. However, these reports use an epitaxially
    grown p-type layer or fin-structure.
  description_type: abstract
  lang: eng

## Creator

- name: Ryo Tanaka
  role: author
  organization: Fuji Electric Co., Ltd.
- name: Shinya Takashima
  role: author
  organization: Fuji Electric Co., Ltd.
- name: Katsunori Ueno
  role: author
  organization: Fuji Electric Co., Ltd.
- name: Masahiro Horita
  role: author
  organization: Nagoya Univ.
- name: Jun Suda
  role: author
  organization: Nagoya Univ.
- name: Jun Uzuhashi
  role: author
  orcid: https://orcid.org/0000-0003-2023-8158
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Tadakatsu Ohkubo
  role: author
  orcid: https://orcid.org/0000-0003-3548-1951
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Masaharu Edo
  role: author
  organization: Fuji Electric Co., Ltd.

## Contact agent



## Publisher

organization: IEEE

## Managing organization



## Keyword

- subject: gallium nitride
  schema: not_defined
- subject: atom probe tomography
  schema: not_defined
- subject: transmission electron microscopy
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

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## Data origin

- data_origin_type: other

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## Measurement method



## Specimen



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## Fileset

- id: 3c075d71-01ef-4b6a-8474-bd517987d34f
  filename: Development of p-type Ion Implantation Technique for Realization of GaN
    Vertical MOSFETs.pdf
  content_type: application/pdf
  size: 791370
  md5: ef2092832e7407f1d74d48af02bb675a

## Thumbnail

fileset_id: 3c075d71-01ef-4b6a-8474-bd517987d34f
filename: Development of p-type Ion Implantation Technique for Realization of GaN
  Vertical MOSFETs.pdf