# Growth of vanadium dioxide thin films on hexagonal boron nitride flakes as transferrable substrates

https://mdr.nims.go.jp/datasets/f4b54271-54f5-4c65-8d98-dc9a20cf547a

## File

- [s41598-019-39091-8.pdf](https://mdr.nims.go.jp/filesets/bb058724-013b-4dd5-9e53-c720b741b74c/download) ([Detail](https://mdr.nims.go.jp/filesets/bb058724-013b-4dd5-9e53-c720b741b74c.md))

## Id

f4b54271-54f5-4c65-8d98-dc9a20cf547a

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-20T06:29:56.669970Z

## Updated at

2025-02-23T13:50:37.476740Z

## Published at

2025-02-23T13:50:37.547706Z

## Doi



## First published url

https://doi.org/10.1038/s41598-019-39091-8

## Date published

2019-02-27

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Growth of vanadium dioxide thin films on hexagonal boron nitride flakes as
    transferrable substrates
  title_type: original
  lang: en

## Description

- description: Vanadium dioxide (VO2) is an archetypal metal-insulator transition
    (MIT) material, which has been known for decades to show an orders-of-magnitude
    change in resistivity across the critical temperature of approximately 340 K.
    In recent years, VO2 has attracted increasing interest for electronic and photonic
    applications, along with advancement in thin film growth techniques. Previously,
    thin films of VO2 were commonly grown on rigid substrates such as crystalline
    oxides and bulk semiconductors, but the use of transferrable materials as the
    growth substrates can provide versatility in applications, including transparent
    and flexible devices. Here, we employ single-crystalline hexagonal boron nitride
    (hBN), which is an insulating layered material, as a substrate for VO2 thin film
    growth. VO2 thin film in the polycrystalline form are grown onto hBN thin flakes
    exfoliated onto silicon (Si) with a thermal oxide, with grains reaching up-to
    a micrometer in size. The VO2 grains on hBN are orientated preferentially with
    the (110) surface of the rutile structure, which is the most energetically favorable.
    The VO2 film on hBN shows a MIT at approximately 340 K, across which the resistivity
    changes by nearly three orders of magnitude, comparable to VO2 films grown on
    common substrates such as sapphire and titanium dioxide. The VO2/hBN stack can
    be picked up from the supporting Si and transferred onto arbitrary substrates,
    onto which VO2 thin films cannot be grown directly. Our results pave the way for
    new possibilities for practical and versatile applications of VO2 thin films in
    electronics and photonics.
  description_type: abstract
  lang: und

## Creator

- name: Shingo Genchi
  role: author
- name: Mahito Yamamoto
  role: author
- name: Koji Shigematsu
  role: author
- name: Shodai Aritomi
  role: author
- name: Ryo Nouchi
  role: author
- name: Teruo Kanki
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Yasukazu Murakami
  role: author
- name: Hidekazu Tanaka
  role: author

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: Vanadium dioxide
  schema: not_defined
- subject: metal-insulator transition
  schema: not_defined
- subject: thin films
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Scientific Reports
  issn: '20452322'
  volume: '9'
  issue: '1'

## Conference



## Related item



## Funding

- identifier: 17K14658
  funder_name: MEXT | Japan Society for the Promotion of Science
- identifier: 16H03871
  funder_name: MEXT | Japan Society for the Promotion of Science
- identifier: '26248061'
  funder_name: MEXT | Japan Society for the Promotion of Science
- identifier: '26248061'
  funder_name: MEXT | Japan Society for the Promotion of Science
- identifier: 17H01054
  funder_name: MEXT | Japan Society for the Promotion of Science

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## Fileset

- id: bb058724-013b-4dd5-9e53-c720b741b74c
  filename: s41598-019-39091-8.pdf
  content_type: application/pdf
  size: 2443830
  md5: 0fe5912cbf51243e3934f597805750a8

## Thumbnail

fileset_id: bb058724-013b-4dd5-9e53-c720b741b74c
filename: s41598-019-39091-8.pdf