Growth of vanadium dioxide thin films on hexagonal boron nitride flakes as transferrable substrates

Shingo Genchi; Mahito Yamamoto; Koji Shigematsu; Shodai Aritomi; Ryo Nouchi; Teruo Kanki; Kenji Watanabe; Takashi Taniguchi; Yasukazu Murakami; Hidekazu Tanaka

doi:10.1038/s41598-019-39091-8

論文 Growth of vanadium dioxide thin films on hexagonal boron nitride flakes as transferrable substrates

Shingo Genchi ; Mahito Yamamoto ; Koji Shigematsu ; Shodai Aritomi ; Ryo Nouchi ; Teruo Kanki ; Kenji Watanabe (National Institute for Materials Science) ; Takashi Taniguchi (National Institute for Materials Science) ; Yasukazu Murakami ; Hidekazu Tanaka

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Shingo Genchi, Mahito Yamamoto, Koji Shigematsu, Shodai Aritomi, Ryo Nouchi, Teruo Kanki, Kenji Watanabe, Takashi Taniguchi, Yasukazu Murakami, Hidekazu Tanaka. Growth of vanadium dioxide thin films on hexagonal boron nitride flakes as transferrable substrates. Scientific Reports. 2019, 9 (1), . https://doi.org/10.1038/s41598-019-39091-8

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Vanadium dioxide (VO2) is an archetypal metal-insulator transition (MIT) material, which has been known for decades to show an orders-of-magnitude change in resistivity across the critical temperature of approximately 340 K. In recent years, VO2 has attracted increasing interest for electronic and photonic applications, along with advancement in thin film growth techniques. Previously, thin films of VO2 were commonly grown on rigid substrates such as crystalline oxides and bulk semiconductors, but the use of transferrable materials as the growth substrates can provide versatility in applications, including transparent and flexible devices. Here, we employ single-crystalline hexagonal boron nitride (hBN), which is an insulating layered material, as a substrate for VO2 thin film growth. VO2 thin film in the polycrystalline form are grown onto hBN thin flakes exfoliated onto silicon (Si) with a thermal oxide, with grains reaching up-to a micrometer in size. The VO2 grains on hBN are orientated preferentially with the (110) surface of the rutile structure, which is the most energetically favorable. The VO2 film on hBN shows a MIT at approximately 340 K, across which the resistivity changes by nearly three orders of magnitude, comparable to VO2 films grown on common substrates such as sapphire and titanium dioxide. The VO2/hBN stack can be picked up from the supporting Si and transferred onto arbitrary substrates, onto which VO2 thin films cannot be grown directly. Our results pave the way for new possibilities for practical and versatile applications of VO2 thin films in electronics and photonics.

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