Enhancement in efficiency and optoelectronic quality of perovskite thin films annealed in MACl vapor

Dhruba B. Khadka; Yasuhiro Shirai; Masatoshi Yanagida; Takuya Masuda; Kenjiro Miyano

doi:10.1039/c7se00033b

論文 Enhancement in efficiency and optoelectronic quality of perovskite thin films annealed in MACl vapor

Dhruba B. Khadka (National Institute for Materials Science) ; Yasuhiro Shirai (National Institute for Materials Science) ; Masatoshi Yanagida (National Institute for Materials Science) ; Takuya Masuda (National Institute for Materials Science) ; Kenjiro Miyano (National Institute for Materials Science)

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Dhruba B. Khadka, Yasuhiro Shirai, Masatoshi Yanagida, Takuya Masuda, Kenjiro Miyano. Enhancement in efficiency and optoelectronic quality of perovskite thin films annealed in MACl vapor. Sustainable Energy & Fuels. 2017, 4 (), 755-766. https://doi.org/10.1039/c7se00033b

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(abstract)

We analyzed and compared quantitatively the optoelectronic characteristics of perovskite PV devices with and without annealing the perovskite layer in a methyl ammonium chloride vapor atmosphere (MACl treatment). We found that the MACl treatment resulted in the mitigation of defect states, reduced defect density, improvement in the carrier profile, and passivation of recombination activities, which we infer as natural consequences of significantly improved film quality with better crystallinity and grain morphology of the perovskite layer. MACl-treated devices are more efficient with the best efficiency of ∼15.1% with small standard deviation (std.) (0.50%) and improved stability compared to devices without MACl treatment having the best efficiency of 12.4% with std. of 0.66%.

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