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説明:

A switch element with a minimal fullerene chain was prepared by spin coating a C60 pyrrolidine trisaccharide (CPTA) film between vertically stacked two metallic electrodes. In this structure, the nanoscale length of the fullerene chain can be adjusted by changing the thickness of the CPTA film by changing spin coating condition. The CPTA film had a rough surface that led to cause distance fluctuations between the two electrodes. At the thinnest point, a nanoscale chain could be selectively formed as a conductive channel that potentially exhibited binary resistance switching between high- and low-resistance states. This resistance change was primarily caused by the polymerization and depolymerization of the nanoscale C60 chain in response to external voltage inputs. When the film thickness was reduced to approximately 3.7 nm, corresponding to 3-4 fullerene chains bridging the two electrodes, a stable switching sequence was reproducibly achieved.

権利情報:

• In Copyright
  

  This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in ACS Applied Electronic Materials, copyright © 2024 American Chemical Society after peer review. To access the final edited and published work see https://doi.org/10.1021/acsaelm.4c00219

キーワード: fullerene, polymerization, C60 pyrrolidine tris-acid (CPTA), resistance switching, vertically stacked structure, nanochannel, fullerene derivative

刊行年月日: 2024-05-28

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Applied Electronic Materials (ISSN: 26376113) vol. 6 issue. 5 p. 3403-3408

研究助成金:

• Japan Society for the Promotion of Science 19H05460
• Japan Society for the Promotion of Science 23K17869

原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.4524

公開URL: https://doi.org/10.1021/acsaelm.4c00219

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更新時刻: 2024-05-29 12:30:15 +0900

MDRでの公開時刻: 2024-05-29 12:30:16 +0900