# Effect of capping on the Dirac semimetal Cd<sub>3</sub>As<sub>2</sub> on Si grown via molecular beam epitaxy

https://mdr.nims.go.jp/datasets/f36a8f0e-da3a-4be5-ab80-144c2b8961ff

## File

- [Lin_2025_Nanotechnology_36_165001.pdf](https://mdr.nims.go.jp/filesets/b514f5f6-9927-4f01-83c6-cecbb02d686b/download) ([Detail](https://mdr.nims.go.jp/filesets/b514f5f6-9927-4f01-83c6-cecbb02d686b.md))

## Id

f36a8f0e-da3a-4be5-ab80-144c2b8961ff

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-02-15T02:01:11.667555Z

## Updated at

2026-02-16T23:30:37.176184Z

## Published at

2026-02-16T09:00:53.410138Z

## Doi



## First published url

https://doi.org/10.1088/1361-6528/adbb74

## Date published

2025-04-21

## Recorded date published

2025-4-21

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Effect of capping on the Dirac semimetal Cd<sub>3</sub>As<sub>2</sub> on
    Si grown via molecular beam epitaxy
  title_type: original
  lang: en

## Description

- description: Tunnel field-effect transistor (TFET) is emerging as a promising alternative
    to overcome the thermionic limit of 60 mV/dec in subthreshold swing (SS) inherent
    to Metal-Oxide-Semiconductor Field- Effect Transistor (MOSFET) through the band-to-band
    tunneling (BTBT) mechanism. TFET offers significant potential for applications
    in future industries, such as low-power sensors and wearable devices, where extreme
    energy efficiency is critical. Notably, due to the characteristic of the BTBT
    mechanism, TFET can maintain stable SS performance even at high temperature, enabling
    low-power operation under such condition. Although numerous theoretical predictions
    and simulations support this capability, experimental validation has not yet to
    be demonstrated. As electric and autonomous vehicles advance, the demand for automotive
    semiconductors has increased, highlighting the importance of transistor technology
    that remains stable at high temperatures and consumes less power. Here, we report
    high temperature TFETs showing SS < 60 mV/dec through vertical heterojunction
    of 2D semiconductors. n-TFET and p-TFET were successfully implemented via BP-MoS2
    and WSe2-ReS2 heterojunction, respectively. Both TFETs reached SSmin under 50
    mV/dec at room temperature and maintained SS1dec_avg under 60 mV/dec up to 400
    K. These findings pave the way for low-power circuits capable of operation in
    harsh environments.
  description_type: abstract
  lang: und

## Creator

- name: Wei-Chen Lin
  role: author
- name: Chiashain Chuang
  role: author
- name: Chun-Wei Kuo
  role: author
- name: Meng-Ting Wu
  role: author
- name: Jie-Ying Lee
  role: author
- name: Hsin-Hsuan Lee
  role: author
- name: Cheng-Hsueh Yang
  role: author
- name: Ji-Wei Ci
  role: author
- name: Tian-Shun Xie
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Nobuyuki Aoki
  role: author
- name: Jyh-Shyang Wang
  role: author
- name: Chi-Te Liang
  role: author

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: 'Dirac semimetal
    '
  schema: not_defined
- subject: 'Cd3As2
    '
  schema: not_defined
- subject: 'molecular beam epitaxy (MBE)
    '
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/
  date_licensed: 2025-03-10

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Nanotechnology
  issn: '09574484'
  volume: '36'
  issue: '16'
  article_number: '165001'

## Conference



## Related item



## Funding

- funder_name: Chung Yuan Christian University
- funder_name: Ministry of Science and Technology
- identifier: 19H05790
  funder_name: KAKENHI
- funder_name: JSPS
- funder_name: Chiba University
- funder_name: Higher Education Sprout Project
- identifier: NSTC 110-2112-M-033-009-MY3
  funder_name: National Science and Technology Council (NSTC), Taiwan

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: b514f5f6-9927-4f01-83c6-cecbb02d686b
  filename: Lin_2025_Nanotechnology_36_165001.pdf
  content_type: application/pdf
  size: 2044568
  md5: daf493476aed4c2a7b45b8c01dcc46b9

## Thumbnail

fileset_id: b514f5f6-9927-4f01-83c6-cecbb02d686b
filename: Lin_2025_Nanotechnology_36_165001.pdf