# Sub-lattice amorphization as a new driver of room temperature plasticity in inorganic semiconductors

https://mdr.nims.go.jp/datasets/f3345891-42e4-42b3-8eaa-f6991bd9b33b

## File

- [The Innovation---Sub-lattice amorphization as a new driver of room temperature plasticity in inorganic semiconductors.pdf](https://mdr.nims.go.jp/filesets/5ef19f01-da56-4ba7-9557-3bb4e11bbcdb/download) ([Detail](https://mdr.nims.go.jp/filesets/5ef19f01-da56-4ba7-9557-3bb4e11bbcdb.md))

## Id

f3345891-42e4-42b3-8eaa-f6991bd9b33b

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-11-08T15:39:55.310769Z

## Updated at

2025-11-10T03:30:35.585084Z

## Published at

2025-11-10T03:24:34.148076Z

## Doi



## First published url

https://doi.org/10.1016/j.xinn.2025.100891

## Date published

2025-04-03

## Recorded date published

2025-6

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Sub-lattice amorphization as a new driver of room temperature plasticity
    in inorganic semiconductors
  title_type: original
  lang: en

## Description

- description: "Metals exhibit excellent ductility due to isotropic metallic bonding,
    enabling large-scale plastic deformation through dislocation motion. In contrast,
    inorganic semiconductors, typically bonded via covalent or ionic interactions,
    possess strong directional bonding that inhibits dislocation movement, rendering
    them brittle at room temperature. This fundamental distinction constrains the
    manufacturing processes of these materials, necessitating subtractive techniques
    such as cutting, grinding, etching. The ability to impart metal-like plasticity
    to inorganic semiconductors would significantly enhance their manufacturability
    and expand their applications in flexible electronics, wearable devices, and bio-integrated
    technologies.\r\nSince 2018, a class of inorganic semiconductors, including Ag2S,
    Bi2Te, Mg3Bi2, etc., has been identified with room-temperature plasticity, presenting
    new opportunities for flexible semiconductor devices."
  description_type: abstract
  lang: und

## Creator

- name: Xinzhi Wu
  role: author
  organization: National Institute for Materials Science
- name: Takao Mori
  role: author
  orcid: https://orcid.org/0000-0003-2682-1846
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: Elsevier BV

## Managing organization



## Keyword

- subject: thermoelectric
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: The Innovation
  volume: '6'
  issue: '2'
  article_number: '100891'

## Conference



## Related item



## Funding

- funder_name: Japan Science and Technology Agency
- identifier: JPMJMI19A1
  funder_name: JST-Mirai Program

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 5ef19f01-da56-4ba7-9557-3bb4e11bbcdb
  filename: The Innovation---Sub-lattice amorphization as a new driver of room temperature
    plasticity in inorganic semiconductors.pdf
  content_type: application/pdf
  size: 2330203
  md5: 8e888903d3201aa12fe9e5579f3a2628

## Thumbnail

fileset_id: 5ef19f01-da56-4ba7-9557-3bb4e11bbcdb
filename: The Innovation---Sub-lattice amorphization as a new driver of room temperature
  plasticity in inorganic semiconductors.pdf