# Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation

https://mdr.nims.go.jp/datasets/f2cf754b-c1af-49dd-ac9e-6fe1c744d8df

## File

- [Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation.pdf](https://mdr.nims.go.jp/filesets/2162ab8a-fab5-45c3-b585-08260d6d9546/download) ([Detail](https://mdr.nims.go.jp/filesets/2162ab8a-fab5-45c3-b585-08260d6d9546.md))

## Id

f2cf754b-c1af-49dd-ac9e-6fe1c744d8df

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2023-09-27T00:57:43.023551Z

## Updated at

2024-01-05T13:13:58.336589Z

## Published at

2023-09-28T04:30:10.629333Z

## Doi

https://doi.org/10.48505/nims.4232

## First published url

https://doi.org/10.1063/5.0097866

## Date published

2022-08-14

## Recorded date published

2022-8-14

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted
    GaN and their impacts on acceptor formation
  title_type: original
  lang: en

## Description

- description: We used atomic-scale direct observations by transmission electron microscopy
    (TEM) and atom probe tomography to clarify the crystallographic structures of
    extended defects and Mg agglomeration that form in Mg ion-implanted GaN during
    post-implantation annealing. The analysis showed that Mg atoms agglomerate at
    dislocations that bound extended defects. The concentration of Mg was higher at
    the dislocations with a larger Burgers vector. This indicates that the cause for
    the Mg agglomeration should be the pressure at the dislocations.  The Mg concentration
    in the highly Mg-rich regions was 1 atomic %, which exceeds the solubility limit
    of Mg in GaN. We investigated isothermal and isochronal evolution of the defects
    by TEM,　cathodoluminescence analysis and positron annihilation spectroscopy. The
    results indicated that the intensity of donor-acceptor-pair emission increases
    with the annealing temperature and the duration increase, and reaches a maximum
    after elimination of the extended defects with highly Mg-rich regions. These results
    strongly suggest that such extended defects reduce the acceptor formation and
    that they can be a cause for inhibiting the formation of p-type GaN, as well as
    the previously reported compensating centers, such as N-related vacancies. The
    mechanism of reducing the acceptor formation by the extended defects is discussed.
  description_type: abstract
  lang: eng

## Creator

- name: Emi Kano
  role: author
- name: Keita Kataoka
  role: author
- name: Jun Uzuhashi
  role: author
  orcid: https://orcid.org/0000-0003-2023-8158
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Kenta Chokawa
  role: author
- name: Hideki Sakurai
  role: author
- name: Akira Uedono
  role: author
- name: Tetsuo Narita
  role: author
- name: Kacper Sierakowski
  role: author
- name: Michal Bockowski
  role: author
- name: Ritsuo Otsuki
  role: author
- name: Koki Kobayashi
  role: author
- name: Yuta Itoh
  role: author
- name: Masahiro Nagao
  role: author
- name: Tadakatsu Ohkubo
  role: author
  orcid: https://orcid.org/0000-0003-3548-1951
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Kazuhiro Hono
  role: author
  orcid: https://orcid.org/0000-0001-7367-0193
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Jun Suda
  role: author
- name: Tetsu Kachi
  role: author
- name: Nobuyuki Ikarashi
  role: author

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: gallium nitride
  schema: not_defined
- subject: transmission electron microscopy
  schema: not_defined
- subject: atom probe tomography
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: JOURNAL OF APPLIED PHYSICS
  issn: '00218979'
  volume: '132'
  issue: '6'
  article_number: '65703'

## Conference



## Related item



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## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Fileset

- id: 2162ab8a-fab5-45c3-b585-08260d6d9546
  filename: Atomic resolution analysis of extended defects and Mg agglomeration in
    Mg-ion-implanted GaN and their impacts on acceptor formation.pdf
  content_type: application/pdf
  size: 1874933
  md5: 280243a1a97fff07943d36be69b4bb77

## Thumbnail

fileset_id: 2162ab8a-fab5-45c3-b585-08260d6d9546
filename: Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted
  GaN and their impacts on acceptor formation.pdf