# Arsenic-flux dependence of surface morphology in InAs homoepitaxy

https://mdr.nims.go.jp/datasets/f246dab3-f735-49b5-8cc3-f185c3ea2a4b

## File

- [JVA24-AR-MBE2025-00446.pdf](https://mdr.nims.go.jp/filesets/c26042f6-d953-4834-8155-ae12194f0bf6/download) ([Detail](https://mdr.nims.go.jp/filesets/c26042f6-d953-4834-8155-ae12194f0bf6.md))

## Id

f246dab3-f735-49b5-8cc3-f185c3ea2a4b

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-09-25T02:09:59.216526Z

## Updated at

2024-09-25T07:30:51.529048Z

## Published at

2024-09-25T07:30:51.600808Z

## Doi

https://doi.org/10.48505/nims.4772

## First published url

https://doi.org/10.1116/6.0003957

## Date published

2024-12-01

## Recorded date published

2024-12-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Arsenic-flux dependence of surface morphology in InAs homoepitaxy
  title_type: original
  lang: en

## Description

- description: Surface morphology in molecular-beam epitaxy of InAs(001), (111)A,
    and (111)B has been studied using scanning tunneling microscopy.  The surface
    morphologies of InAs strongly depend on the substrate temperature, the substrate
    orientation, and the As/In flux ratio.  The size and density of two-dimensional
    InAs islands on the (001) surface decreases and increases, respectively, as the
    As/In flux ratio is increased.  On the other hand, the island size (density) is
    increased (decreased) with increasing the As flux on the (111)A and (111)B surface.  Surface
    reconstructions on the growing surface strongly affect the diffusion and incorporation
    kinetics of In atoms, resulting in the observed surface morphologies.
  description_type: abstract
  lang: eng

## Creator

- name: Akihiro Ohtake
  role: author
  orcid: https://orcid.org/0000-0002-3519-4613
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Optical Materials
    Field/Semiconductor Epitaxial Structures Group
  ror: https://ror.org/026v1ze26
- name: Takuya Kawazu
  role: author
  orcid: https://orcid.org/0000-0001-8081-4167
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Optical Materials
    Field/Semiconductor Epitaxial Structures Group
  ror: https://ror.org/026v1ze26
- name: Takaaki Mano
  role: author
  orcid: https://orcid.org/0000-0002-6955-260X
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Optical Materials
    Field/Semiconductor Epitaxial Structures Group
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: American Institute of Physics

## Managing organization



## Keyword

- subject: surface reconstructions
  schema: not_defined
- subject: molecular beam epitaxy
  schema: not_defined
- subject: scanning tunneling microscopy
  schema: not_defined
- subject: III-V semiconductors
  schema: not_defined

## Rights

- description: 'This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in Akihiro Ohtake, Takuya Kawazu, Takaaki Mano; Arsenic-flux dependence of surface
    morphology in InAs homoepitaxy. J. Vac. Sci. Technol. A 1 December 2024; 42 (6):
    062702 and may be found at https://doi.org/10.1116/6.0003957'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
  issn: '07342101'
  volume: '42'
  issue: '6'
  article_number: '062702'

## Conference



## Related item



## Funding

- identifier: JP23K04592.
  funder_name: 日本学術振興会

## Instrument



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## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



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## Energy level/transition state



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## Fileset

- id: c26042f6-d953-4834-8155-ae12194f0bf6
  filename: JVA24-AR-MBE2025-00446.pdf
  content_type: application/pdf
  size: 487841
  md5: f8c8e5c09877434929dba8caa19a66f3

## Thumbnail

fileset_id: c26042f6-d953-4834-8155-ae12194f0bf6
filename: JVA24-AR-MBE2025-00446.pdf