# Evaluation of stress tensor around a threading defect in diamond: Application of NV center-based measurement and comparative multi-modal analysis

https://mdr.nims.go.jp/datasets/f19f41e2-ad11-4a00-aae8-12a382a08573

## File

- [TTsuji_JAP138_174401(2025).pdf](https://mdr.nims.go.jp/filesets/f79166cc-afa8-4114-a5d9-1a2e6c4ffcce/download) ([Detail](https://mdr.nims.go.jp/filesets/f79166cc-afa8-4114-a5d9-1a2e6c4ffcce.md))

## Id

f19f41e2-ad11-4a00-aae8-12a382a08573

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-12-16T07:11:11.718008Z

## Updated at

2025-12-19T07:30:36.056231Z

## Published at

2025-12-19T05:11:36.256861Z

## Doi



## First published url

https://doi.org/10.1063/5.0292833

## Date published

2025-11-07

## Recorded date published

2025-11-7

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: 'Evaluation of stress tensor around a threading defect in diamond: Application
    of NV center-based measurement and comparative multi-modal analysis'
  title_type: original
  lang: en

## Description

- description: Threading defects in diamond degrade the performance of diamond-based
    quantum and electronic devices. Although the disorder of the atomic arrangement
    induced by the threading defects is considered to be the cause of the performance
    degradation, yet quantitative and spatially resolved evaluation of stress tensor
    that characterizes the magnitude of the disorder has remained challenging. In
    this study, we applied the evaluation technique of the stress tensor based on
    NV centers to the mapping of the stress field around a threading defect in a chemical
    vapor deposition (CVD) diamond film. Furthermore, we compared the stress tensor
    measured using NV centers with that obtained by conventional methods such as Raman
    spectroscopy and X-ray topography. Around the threading defect, the components
    of the stress tensor σxy, σyz, σzx, and σxx+σyy+σzz varied by approximately 0.2,
    0.2, 0.3, and 1.2 GPa, respectively, and each component exhibited a rotationally
    symmetric distribution extending over a diameter of approximately 10 to 20 μm.
    We calculated the Raman shift mapping from the stress tensor obtained using NV
    centers and the Raman peak was estimated to decrease by approximately 0.9 cm⁻¹
    due to the stress tensor at the center of the threading defect. This value was
    comparable to the experimental result of Raman shift mapping. These results indicate
    that the components of stress tensor measured by NV centers accurately reflect
    the stress induced by the threading defects. The stress tensor and X-ray topography
    images suggest that the threading defect measured in this study was a bundle dislocation.
  description_type: abstract
  lang: und

## Creator

- name: Takeyuki Tsuji
  role: author
  orcid: https://orcid.org/0000-0002-7342-6198
  organization: National Institute for Materials Science
- name: Shunta Harada
  role: author
- name: Tokuyuki Teraji
  role: author
  orcid: https://orcid.org/0000-0002-7731-0547
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: Crystallographic defects
  schema: not_defined
- subject: Optically detected magnetic resonance,
  schema: not_defined
- subject: Chemical vapor deposition
  schema: not_defined
- subject: X-ray topography
  schema: not_defined
- subject: Raman spectroscopy
  schema: not_defined
- subject: Elasticity theory
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/
  date_licensed: 2025-11-05

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Journal of Applied Physics
  issn: '00218979'
  volume: '138'
  issue: '17'
  article_number: '174401'

## Conference



## Related item



## Funding

- identifier: JPMXS0118068379
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: JPMJMS2062
  funder_name: Japan Science and Technology Agency
- identifier: JPMJAP24C1
  funder_name: Japan Science and Technology Agency
- identifier: 24H00406
  funder_name: Japan Society for the Promotion of Science
- identifier: 24K22963
  funder_name: Japan Society for the Promotion of Science
- identifier: JPMJMS2062
  funder_name: JST Moonshot R&D
- identifier: JPMJAP24C1
  funder_name: JST ASPIRE

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## Fileset

- id: f79166cc-afa8-4114-a5d9-1a2e6c4ffcce
  filename: TTsuji_JAP138_174401(2025).pdf
  content_type: application/pdf
  size: 2773813
  md5: 531bc82ea7313f15d80225d2dd4cef98

## Thumbnail

fileset_id: f79166cc-afa8-4114-a5d9-1a2e6c4ffcce
filename: TTsuji_JAP138_174401(2025).pdf