# Physical Reservoir Computing Utilizing Ion‐Gating Transistors Operating in Electric Double Layer and Redox Mechanisms

https://mdr.nims.go.jp/datasets/f18b98f4-8198-488d-8d55-07e3aa96e7b6

## File

- [Adv Elect Materials - 2024 - Tsuchiya - Physical Reservoir Computing Utilizing Ion‐Gating Transistors Operating in Electric.pdf](https://mdr.nims.go.jp/filesets/788fc228-b164-4268-8951-a23ecb461f71/download) ([Detail](https://mdr.nims.go.jp/filesets/788fc228-b164-4268-8951-a23ecb461f71.md))

## Id

f18b98f4-8198-488d-8d55-07e3aa96e7b6

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-12-12T07:32:31.371101Z

## Updated at

2024-12-13T03:30:51.353332Z

## Published at

2024-12-13T03:30:51.428537Z

## Doi



## First published url

https://doi.org/10.1002/aelm.202400625

## Date published

2024-11-20

## Recorded date published

2024-12

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Physical Reservoir Computing Utilizing Ion‐Gating Transistors Operating in
    Electric Double Layer and Redox Mechanisms
  title_type: original
  lang: en

## Description

- description: The enormous energy consumption of modern machine learning technologies,
    such as deep learning and generative artificial intelligence, is one of the most
    critical concerns of the time. To solve this problem, physical reservoir computing,
    which uses the non-linear dynamics exhibited by mechanical systems such as materials
    and devices as a computational resource for highly efficient information processing,
    has attracted much attention in recent years. In particular, ion-gated transistors,
    a group of devices that control electrical conductivity using electrochemical
    mechanisms such as electric double layers and redox, show very high computational
    performance with complex and diverse output properties in contrast to their simple
    structures, due to the complexity of the physical and chemical processes involved.
    This research provides an overview of physical reservoir computing using ion-gating
    transistors, focusing on the materials used, various computational tasks, and
    operating mechanisms.
  description_type: abstract
  lang: und

## Creator

- name: Takashi Tsuchiya
  role: author
  orcid: https://orcid.org/0000-0002-6950-6160
- name: Daiki Nishioka
  role: author
  orcid: https://orcid.org/0000-0002-3369-7700
- name: Wataru Namiki
  role: author
  orcid: https://orcid.org/0000-0003-4053-7366
- name: Kazuya Terabe
  role: author
  orcid: https://orcid.org/0000-0003-3988-3456

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: reservoir computing
  schema: not_defined
- subject: ion-gating reservoir
  schema: not_defined
- subject: solid state ionics
  schema: not_defined
- subject: ion-gating transistor
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Advanced Electronic Materials
  issn: 2199160X
  volume: '10'
  issue: '12'

## Conference



## Related item



## Funding

- identifier: 24KJ0229
  funder_name: Japan Society for the Promotion of Science
- identifier: JPMJPR23H4
  funder_name: Precursory Research for Embryonic Science and Technology

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 788fc228-b164-4268-8951-a23ecb461f71
  filename: Adv Elect Materials - 2024 - Tsuchiya - Physical Reservoir Computing Utilizing
    Ion‐Gating Transistors Operating in Electric.pdf
  content_type: application/pdf
  size: 8377666
  md5: 111c2f88479b26afd8947df022a0d7e4

## Thumbnail

fileset_id: 788fc228-b164-4268-8951-a23ecb461f71
filename: Adv Elect Materials - 2024 - Tsuchiya - Physical Reservoir Computing Utilizing
  Ion‐Gating Transistors Operating in Electric.pdf