# Impact of doping profile on electrical performance of boron-doped diamond metal–oxide–semiconductor field-effect transistors

https://mdr.nims.go.jp/datasets/f1513885-572e-4e6a-8b6d-17b65af26c65

## File

- [manuscript(cleaned).docx](https://mdr.nims.go.jp/filesets/f9d3375f-e428-4206-a502-388c7ffadc23/download) ([Detail](https://mdr.nims.go.jp/filesets/f9d3375f-e428-4206-a502-388c7ffadc23.md))

## Id

f1513885-572e-4e6a-8b6d-17b65af26c65

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-07-14T00:49:45.975078Z

## Updated at

2026-07-14T01:52:28.876600Z

## Published at

2026-07-14T03:30:13.014742Z

## Doi

https://doi.org/10.48505/nims.6406

## First published url

https://doi.org/10.1063/5.0318837

## Date published

2026-07-14

## Recorded date published

2026-7-14

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Impact of doping profile on electrical performance of boron-doped diamond
    metal–oxide–semiconductor field-effect transistors
  title_type: original
  lang: en

## Description

- description: Electrical characteristics of boron-doped diamond (B-diamond) metal-oxide-semiconductor
    field-effect transistors (MOSFETs) fabricated on an epitaxial layer with a thickness
    (tboron) of 1514 nm and a boron doping concentration (Nboron) level of 1017 cm-3
    are investigated. For the as-fabricated B-diamond MOSFET operating at room temperature
    (298 K), the maximum absolute drain current (|ID,max|) is 4.7 mA/mm. At elevated
    temperatures of 573 K and 673 K, the |ID,max| values increase to 76.9 mA/mm and
    109.2 mA/mm, respectively. The threshold voltage (VTH) values for B-diamond MOSFETs
    operating at 298 K, 573 K, and 673 K are 320.2 ±5.0 V, 1143.2 ±20.0 V, and 895.1
    ±20.0 V, respectively. Post-annealing at 773 K for 30 minutes, the |ID,max| and
    VTH measured at 298 K improve to 6.0 mA/mm and 258.7 ±5.0 V, respectively. Capacitance–voltage
    measurements indicate that the annealing process improves the dielectric property
    of the Al2O3 insulator and reduces the fixed and trapped charge densities in the
    Al2O3/B-diamond MOS capacitor. Impact of the doping profile on the electrical
    performance of B-diamond FETs is summarized. At a constant Nboron level, both
    |ID,max| and VTH increase with increasing tboron. On the other hand, at a similar
    tboron, these parameters increase with higher Nboron.
  description_type: abstract
  lang: und

## Creator

- name: J. Liu
  role: author
  orcid: https://orcid.org/0000-0003-2580-7401
- name: T. Teraji
  role: author
  orcid: https://orcid.org/0000-0002-7731-0547

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: diamond
  schema: not_defined

## Rights

- description: 'This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in J. Liu, T. Teraji; Impact of doping profile on electrical performance of boron-doped
    diamond metal–oxide–semiconductor field-effect transistors. J. Appl. Phys. 14
    July 2026; 140 (2): 024504 and may be found at https://doi.org/10.1063/5.0318837.'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

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## Journal

- title: Journal of Applied Physics
  issn: '00218979'
  volume: '140'
  issue: '2'
  article_number: '024504'

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## Related item



## Funding

- identifier: 23K03966 and 20H05661
  funder_name: Japan Society for the Promotion of Science
- identifier: JPMJCR1773
  funder_name: Core Research for Evolutional Science and Technology
- identifier: JPMJMS2062
  funder_name: Japan Science and Technology Agency
- identifier: JPMI00316
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: JPMXS0118068379
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: JPMXP1225WS0451 and JPMXP1225NM5076
  funder_name: Ministry of Education, Culture, Sports, Science and Technology

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## Fileset

- id: f9d3375f-e428-4206-a502-388c7ffadc23
  filename: manuscript(cleaned).docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 3156729
  md5: 71c88b558c01708ea2b445b096653e89

## Thumbnail

fileset_id: f9d3375f-e428-4206-a502-388c7ffadc23
filename: manuscript(cleaned).docx