# Observation of the fluctuation spin Hall effect in a low-resistivity antiferromagnet

https://mdr.nims.go.jp/datasets/f0e848be-21bc-4cce-bbde-08501ebd35b5

## File

- [Manuscript_Observation of fluctuation spin Hall effect in Low-resistive Antiferromagnet.docx](https://mdr.nims.go.jp/filesets/bd444e71-d5e0-4e38-a7fc-51b0243a7400/download) ([Detail](https://mdr.nims.go.jp/filesets/bd444e71-d5e0-4e38-a7fc-51b0243a7400.md))
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## Id

f0e848be-21bc-4cce-bbde-08501ebd35b5

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2023-12-27T09:07:48.276798Z

## Updated at

2024-12-08T03:30:12.614690Z

## Published at

2024-12-08T03:30:13.742855Z

## Doi

https://doi.org/10.48505/nims.4323

## First published url

https://doi.org/10.1021/acs.nanolett.3c03085

## Date published

2023-12-27

## Recorded date published

2023-12-27

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Observation of the fluctuation spin Hall effect in a low-resistivity antiferromagnet
  title_type: original
  lang: en

## Description

- description: The spin Hall effect (SHE) can generate a pure spin current by an electric
    current, which is promisingly used to electrically control magnetization. To reduce
    the power consumption of this control, a giant spin Hall angle (SHA) in the SHE
    is desired in low-resistivity systems for practical applications. Here, critical
    spin fluctuation near the antiferromagnetic (AFM) phase transition in chromium
    (Cr) is proven to be an effective mechanism for creating an additional part of
    the SHE, named the fluctuation spin Hall effect. The SHA is significantly enhanced
    when the temperature approaches the Néel temperature (TN) of Cr and has a peak
    value of −0.36 near TN. This value is higher than the room-temperature value by
    153% and leads to a low normalized power consumption among known spin–orbit torque
    materials. This study demonstrates the critical spin fluctuation as a prospective
    way to increase the SHA and enriches the AFM material candidates for spin–orbitronic
    devices.
  description_type: abstract
  lang: eng

## Creator

- name: Chi Fang
  role: author
  orcid: https://orcid.org/0000-0001-6827-1913
- name: Caihua Wan
  role: author
- name: Xiaoyue Zhang
  role: author
- name: Satoshi Okamoto
  role: author
  orcid: https://orcid.org/0000-0002-0493-7568
- name: Tianyi Ma
  role: author
  orcid: https://orcid.org/0000-0002-5987-6459
- name: Jianying Qin
  role: author
- name: Xiao Wang
  role: author
- name: Chenyang Guo
  role: author
- name: Jing Dong
  role: author
- name: Guoqiang Yu
  role: author
  orcid: https://orcid.org/0000-0002-7439-6920
- name: Zhenchao Wen
  role: author
  orcid: https://orcid.org/0000-0001-7496-1339
  organization: National Institute for Materials Science
- name: Ning Tang
  role: author
  orcid: https://orcid.org/0000-0003-2576-523X
- name: Stuart S. P. Parkin
  role: author
  orcid: https://orcid.org/0000-0003-4702-6139
- name: Naoto Nagaosa
  role: author
- name: Yuan Lu
  role: author
  orcid: https://orcid.org/0000-0003-3337-8205
- name: Xiufeng Han
  role: author
  orcid: https://orcid.org/0000-0001-8053-793X

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: spin Hall effect
  schema: not_defined
- subject: spin fluctuation
  schema: not_defined
- subject: antiferromagnetic chromium
  schema: not_defined

## Rights

- description: This document is the Accepted Manuscript version of a Published Work
    that appeared in final form in NANO LETTERS, copyright © 2023 American Chemical
    Society after peer review and technical editing by the publisher. To access the
    final edited and published work see https://doi.org/10.1021/acs.nanolett.3c03085
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2023-12-08
end_date: 2024-12-08

## Journal

- title: NANO LETTERS
  issn: '15306984'
  volume: '23'
  start_page: 11485
  end_page: 11492

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Custom property



## Fileset

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  filename: Manuscript_Observation of fluctuation spin Hall effect in Low-resistive
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  filename: SI_Observation of fluctuation spin Hall effect in Low-resistive Antiferromagnet.docx
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## Thumbnail

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filename: Manuscript_Observation of fluctuation spin Hall effect in Low-resistive
  Antiferromagnet.docx