# The Energy Level Alignment at the Buffer/Cu(In,Ga)Se<sub>2</sub> Thin‐Film Solar Cell Interface for CdS and GaO<sub>x</sub>

https://mdr.nims.go.jp/datasets/f07de4cc-5880-46e6-9d8f-af3747f6687d

## File

- [Valenta_Adv_Mater_Interf2024.pdf](https://mdr.nims.go.jp/filesets/d50468ea-98e7-4c4d-b39f-7b9bddba83d5/download) ([Detail](https://mdr.nims.go.jp/filesets/d50468ea-98e7-4c4d-b39f-7b9bddba83d5.md))

## Id

f07de4cc-5880-46e6-9d8f-af3747f6687d

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-05-08T06:04:05.394291Z

## Updated at

2024-05-09T03:30:19.790245Z

## Published at

2024-05-09T03:30:20.361656Z

## Doi



## First published url

https://doi.org/10.1002/admi.202301110

## Date published

2024-03-08

## Recorded date published

2024-5

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: The Energy Level Alignment at the Buffer/Cu(In,Ga)Se<sub>2</sub> Thin‐Film
    Solar Cell Interface for CdS and GaO<sub>x</sub>
  title_type: original
  lang: en

## Description

- description: 'The energy level alignment at the GaOx/CIGSe and CdS/CIGSe interfaces
    are compared by means of direct and inverse photoemission. For the GaOx/CIGSe
    we find a (0.04 ± 0.07) eV (i.e., a small spike-like) conduction band offset (CBO)
    and a (-3.21 ± 0.19) eV (i.e., a large cliff-like) valence band offset (VBO),
    which suggests a nearly ideal charge-selective contact. The derived GaOx band
    gap of (4.80 ± 0.25) eV confirms its utility as a highly transparent buffer layer.
    However, the GaOx (with x derived to be 1.1 ± 0.1) exhibits considerable defect-related
    occupied states above the valence band maximum. It is proposed that these states
    may increase charge carrier recombination and decrease open circuit voltage in
    respective devices; also explaining why solar cells with standard CdS buffer outperform
    devices with GaOx buffer, despite less ideal electronic interface properties (CBO:
    [-0.18 ± 0.07] eV, VBO: [-0.98 ± 0.15] eV) and the smaller CdS band gap of (2.35
    ± 0.22) eV.'
  description_type: abstract
  lang: und

## Creator

- name: Donald Valenta
  role: author
  orcid: https://orcid.org/0009-0003-8080-0285
- name: Hasan Arif Yetkin
  role: author
  orcid: https://orcid.org/0000-0002-1401-5866
- name: Tim Kodalle
  role: author
  orcid: https://orcid.org/0000-0002-8792-9669
- name: Jakob Bombsch
  role: author
  orcid: https://orcid.org/0000-0002-0820-162X
- name: Raul Garcia‐Diez
  role: author
  orcid: https://orcid.org/0009-0000-9374-1083
- name: Claudia Hartmann
  role: author
  orcid: https://orcid.org/0000-0002-8017-8161
- name: Shigenori Ueda
  role: author
  orcid: https://orcid.org/0000-0001-9425-0614
- name: Roberto Félix
  role: author
- name: Johannes Frisch
  role: author
  orcid: https://orcid.org/0000-0002-7895-7529
- name: Lucas Bodenstein‐Dresler
  role: author
  orcid: https://orcid.org/0000-0001-7602-2773
- name: Regan G. Wilks
  role: author
  orcid: https://orcid.org/0000-0001-5822-8399
- name: Christian A. Kaufmann
  role: author
- name: Marcus Bär
  role: author
  orcid: https://orcid.org/0000-0001-8581-0691

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: thin-film solar cell
  schema: not_defined
- subject: Cu(In,Ga)Se2
  schema: not_defined
- subject: CdS
  schema: not_defined
- subject: GaOx
  schema: not_defined
- subject: interface
  schema: not_defined
- subject: energy level alignment
  schema: not_defined
- subject: hard and soft X-ray photoelectron spectroscopy
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Advanced Materials Interfaces
  issn: '21967350'
  volume: '11'
  issue: '13'

## Conference



## Related item



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## Instrument



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## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



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## Fileset

- id: d50468ea-98e7-4c4d-b39f-7b9bddba83d5
  filename: Valenta_Adv_Mater_Interf2024.pdf
  content_type: application/pdf
  size: 848302
  md5: 80dbeeb9ac2343c71395bd3f0900a4a0

## Thumbnail

fileset_id: d50468ea-98e7-4c4d-b39f-7b9bddba83d5
filename: Valenta_Adv_Mater_Interf2024.pdf