Donald Valenta
;
Hasan Arif Yetkin
;
Tim Kodalle
;
Jakob Bombsch
;
Raul Garcia‐Diez
;
Claudia Hartmann
;
Shigenori Ueda
;
Roberto Félix
;
Johannes Frisch
;
Lucas Bodenstein‐Dresler
;
Regan G. Wilks
;
Christian A. Kaufmann
;
Marcus Bär
Description:
(abstract)The energy level alignment at the GaOx/CIGSe and CdS/CIGSe interfaces are compared by means of direct and inverse photoemission. For the GaOx/CIGSe we find a (0.04 ± 0.07) eV (i.e., a small spike-like) conduction band offset (CBO) and a (-3.21 ± 0.19) eV (i.e., a large cliff-like) valence band offset (VBO), which suggests a nearly ideal charge-selective contact. The derived GaOx band gap of (4.80 ± 0.25) eV confirms its utility as a highly transparent buffer layer. However, the GaOx (with x derived to be 1.1 ± 0.1) exhibits considerable defect-related occupied states above the valence band maximum. It is proposed that these states may increase charge carrier recombination and decrease open circuit voltage in respective devices; also explaining why solar cells with standard CdS buffer outperform devices with GaOx buffer, despite less ideal electronic interface properties (CBO: [-0.18 ± 0.07] eV, VBO: [-0.98 ± 0.15] eV) and the smaller CdS band gap of (2.35 ± 0.22) eV.
Rights:
Keyword: thin-film solar cell, Cu(In,Ga)Se2, CdS, GaOx, interface, energy level alignment, hard and soft X-ray photoelectron spectroscopy
Date published: 2024-03-08
Publisher: Wiley
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1002/admi.202301110
Related item:
Other identifier(s):
Contact agent:
Updated at: 2024-05-09 12:30:19 +0900
Published on MDR: 2024-05-09 12:30:20 +0900
Filename | Size | |||
---|---|---|---|---|
Filename |
Valenta_Adv_Mater_Interf2024.pdf
(Thumbnail)
application/pdf |
Size | 828 KB | Detail |