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Significant spin current generation from highly conductive materials is promising for spintronic applications, such as spin-orbit-torque magnetic random-access memories. In this work, we fabricated epitaxial Ru/Cu heterostructures with interface engineering where 1-nm-thick Ru and Cu layers were alternately deposited at the interface. The spin current generation in the heterostructures was evaluated by unidirectional spin Hall magnetoresistance and spin-torque ferromagnetic resonance. A sizable spin Hall efficiency (~-2%) was achieved in the Ru/Cu sample with a sharp interface which may result from the interface spin filtering effect. Increased spin Hall efficiency (~-4%) was observed in the interface-engineered samples which could be attributed to the intrinsic contribution from lattice distortion and local band structure near the interface. The effective spin Hall conductivity was estimated to be comparable to that of Platinum.

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• Creative Commons BY Attribution 4.0 International
  

キーワード: Spin current generation, Ru/Cu epitaxial bilayers

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会議: Intermag 2023 ()

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原稿種別: 論文以外のデータ

MDR DOI: https://doi.org/10.48505/nims.4263

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更新時刻: 2023-11-24 13:56:12 +0900

MDRでの公開時刻: 2023-11-25 13:30:29 +0900