# Conductive-bridge interlayer contacts for two-dimensional optoelectronic devices https://mdr.nims.go.jp/datasets/f0296faa-801b-4297-95e6-248f8c2fc28f ## File - [2025A01781G_Accepted Manuscript.pdf](https://mdr.nims.go.jp/filesets/9ee83885-d724-4962-92c6-0bc0af9eba56/download) ([Detail](https://mdr.nims.go.jp/filesets/9ee83885-d724-4962-92c6-0bc0af9eba56.md)) - [2025A01781G_Supplementary information.pdf](https://mdr.nims.go.jp/filesets/bfaa6844-1d4d-4154-9f46-98d6b3cb9408/download) ([Detail](https://mdr.nims.go.jp/filesets/bfaa6844-1d4d-4154-9f46-98d6b3cb9408.md)) - [2025A01781G_Figures.pdf](https://mdr.nims.go.jp/filesets/5c7e9581-3671-4b5f-9dfe-e3772776843a/download) ([Detail](https://mdr.nims.go.jp/filesets/5c7e9581-3671-4b5f-9dfe-e3772776843a.md)) ## Id f0296faa-801b-4297-95e6-248f8c2fc28f ## Local identifier ## Visibility open_to_public ## State published ## Created at 2026-07-27T23:47:29.524780Z ## Updated at 2026-07-28T04:42:00.984558Z ## Published at 2026-07-28T07:27:19.181349Z ## Doi ## First published url https://doi.org/10.1038/s41928-025-01339-9 ## Date published 2025-02-05 ## Recorded date published ## Resource type journal_article ## Manuscript type accepted_manuscript ## Collection ## Title - title: Conductive-bridge interlayer contacts for two-dimensional optoelectronic devices title_type: original lang: en ## Description - description: Photodiodes based on two-dimensional semiconductors are of potential use in the development of optoelectronic devices, but their photovoltaic efficiency is limited by strong Fermi level pinning at metal–semiconductor contacts. Typical metal–interlayer–semiconductor contacts can address this issue, but can also lead to an increase in series resistance. Here we report a conductive-bridge interlayer contact that offers both Fermi level depinning and low resistance. We create an oxide interlayer that decouples the metal and semiconductor, while embedded gold nanoclusters in the interlayer act as conductive paths that facilitate efficient charge transport. Using these contacts, we fabricate a tungsten disulfide (WS2) photodiode with a photoresponsivity of 0.29 A W−1, linear dynamic range of 122 dB and power conversion efficiency of 9.9%. Our approach also provides a platform for probing photocarrier dynamics, and we find that contact recombination substantially affects photovoltaic performance. In addition, we illustrate the potential of using photodiodes with these conductive-bridge interlayer contacts as full-colour two- and three-dimensional imagers. description_type: abstract lang: en ## Creator - name: Jisu Jang role: author - name: Jung Pyo Hong role: author - name: Sang-Jun Kim role: author - name: Jongtae Ahn role: author - name: Byoung-Soo Yu role: author - name: Jaewon Han role: author - name: Kihyun Lee role: author - name: Aelim Ha role: author - name: Eunki Yoon role: author - name: Wonsik Kim role: author - name: Suyeon Jo role: author - name: Hyun Woo Ko role: author - name: Seon Kyu Yoon role: author - name: Takashi Taniguchi role: author orcid: https://orcid.org/0000-0002-1467-3105 organization: National Institute for Materials Science - name: Kenji Watanabe role: author orcid: https://orcid.org/0000-0003-3701-8119 organization: National Institute for Materials Science - name: Hogil Baek role: author - name: Dae-Yeon Kim role: author - name: Kimoon Lee role: author - name: Sungchul Mun role: author - name: Kyu Hyoung Lee role: author - name: Soohyung Park role: author - name: Kwanpyo Kim role: author - name: Young Jae Song role: author - name: Seung Ah Lee role: author - name: Hyunwoo J. Kim role: author - name: Jae Won Shim role: author - name: Gunuk Wang role: author - name: Ji-Hoon Kang role: author - name: Min-Chul Park role: author - name: Do Kyung Hwang role: author ## Contact agent ## Publisher organization: Springer Science and Business Media LLC ## Managing organization ## Keyword - subject: Two-dimensional semiconductor schema: not_defined - subject: Photodiode schema: not_defined - subject: Metal-semiconductor contact schema: not_defined ## Rights - description: 'This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: https://doi.org/10.1038/s41928-025-01339-9' identifier: http://rightsstatements.org/vocab/InC/1.0/ ## Other identifier(s) ## Data origin - data_origin_type: other ## Embargo start_date: 2025-02-05 end_date: 2025-08-05 ## Journal - title: Nature Electronics issn: '25201131' volume: '8' issue: '4' start_page: 298 end_page: 308 ## Conference ## Related item ## Funding - identifier: 2E32942 funder_name: Korea Institute of Science and Technology - identifier: 2V10330-24-P039 funder_name: Korea Institute of Science and Technology - identifier: 2E33423 funder_name: Korea Institute of Science and Technology - identifier: 2020-0-00841 funder_name: MSIP | Institute for Information and communications Technology Promotion - identifier: 2023-00258639 funder_name: MSIP | Institute for Information and communications Technology Promotion - identifier: 2023R1A2C2003985 funder_name: National Research Foundation of Korea - identifier: IBS-R026-D1 funder_name: National Research Foundation of Korea - identifier: NRF-2017R1A5A1014862 funder_name: National Research Foundation of Korea - identifier: IBS-R026-D1 funder_name: National Research Foundation of Korea - identifier: 421025043SB010 funder_name: Korea Institute of Planning and Evaluation for Technology in Food, Agriculture, Forestry and Fisheries - identifier: R2020040080 funder_name: Korea Creative Content Agency - identifier: PR08-04-000-23 funder_name: MOSPA | Korean National Police Agency ## Instrument ## Instrument operator ## Instrument managing organization ## Measurement method ## Specimen ## Chemical composition ## Structure for specimen ## Structural feature for specimen ## Specific property for specimen ## Process for specimen treatment ## Computational method ## Energy level/transition state ## Software ## Custom property ## Fileset - id: 9ee83885-d724-4962-92c6-0bc0af9eba56 filename: 2025A01781G_Accepted Manuscript.pdf content_type: application/pdf size: 487862 md5: a32460a96e917166ac56803009dbde9c - id: bfaa6844-1d4d-4154-9f46-98d6b3cb9408 filename: 2025A01781G_Supplementary information.pdf content_type: application/pdf size: 4023031 md5: 0bd2b8d751c39785e9c6f94fe6cb20cb - id: 5c7e9581-3671-4b5f-9dfe-e3772776843a filename: 2025A01781G_Figures.pdf content_type: application/pdf size: 2574743 md5: 60629e183b0be5f6edadcfad6abdebbe ## Thumbnail fileset_id: 5c7e9581-3671-4b5f-9dfe-e3772776843a filename: 2025A01781G_Figures.pdf