Download file (1.33MB)
Download as zip (1.18MB)

コレクション

引用

説明:

Refractory materials with good optical properties are required for the development of novel high-temperature photonic and plasmonic photothermal applications. Whereas conventional plasmonic materials have excellent optical properties but low melting points, most refractory metals exhibit low plasmonic responses and oxidize easily in the atmosphere. Hence, in this study, cerium hexaboride (CeB6) thin films are grown via electron-beam deposition on Si(100) and sapphire substrates. Epitaxial growth of this material is achieved under specific conditions, thus yielding high crystallinity and strong plasmonic polarizability within the infrared spectral region. The optical properties of CeB6 improved significantly depending on the template substrate and growth conditions, achieving a six times higher plasmonic figure-of-merit on R-sapphire compared with on Si substrates. The high performance of CeB6 films, as reflected by their superior plasmonic figures-of-merit particularly in the near-infrared region (1.0–2.0 μm) compared with conventional refractory materials, renders them highly promising candidates for photothermal and optoelectronic applications.

権利情報:

• In Copyright
  This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © 2025 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaelm.5c00022.

キーワード: epitaxial growth, plasmonics, rare-earth hexaborides, high-temperature applications, CeB6

刊行年月日: 2025-03-11

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Applied Electronic Materials (ISSN: 26376113) vol. 7 issue. 5 p. 2093-2101

研究助成金:

• Japan Society for the Promotion of Science 21F21370 (外国人特別研究員奨励費)

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5869

公開URL: https://doi.org/10.1021/acsaelm.5c00022

関連資料:

その他の識別子:

連絡先:

更新時刻: 2026-02-27 12:30:33 +0900

MDRでの公開時刻: 2026-02-27 09:51:46 +0900